Diagnostic based modeling for determining absolute atomic oxygen densities in atmospheric pressure helium-oxygen plasmas. Niemi, K; Reuter, S; Graham, L.M; Waskoenig, J; Gans, T. Applied Physics Letters 2009
NCPST develops and applies advanced plasma measurement techniques for detailed fundamental investigations as well as smart process monitoring and control technologies.
About the Research Area
Plasma diagnostics are important for measuring and monitoring species, mechanisms and for process control. These, often most powerful when combined with simulations, provide understanding and insight of the plasma environment. This understanding is a key element in the development of plasma control strategies and solutions for technological development. Sensing technologies are important for real time monitoring of processes.
Diagnostics in the plasma environment are not trivial and are under continuous development as knowledge and technology advances. Advanced diagnostic techniques often exploit new laser technologies, coupled with atomic and molecular physics understanding. Electrical plasma emission is also a powerful tool for plasma sensing and process control. Combining sensors or diagnostics with advanced data science techniques can additionally help provide greater insight into complex plasma systems.
Diagnostics and Sensors Publications
Reactive amine surfaces for biosensor applications, prepared by plasma-enhanced chemical vapour modification of polyolefin materials. Volcke, C; Gandhiraman, R.P; Gubala, V; Raj, J; Cummins, Th; Fonder, G; Nooney, R.I; Mekhalif, Z; Herzog, G; Daniels, S; Arrigan, D.W.M; Cafolla, A.A; Williams, D.E. Biosensors and Bioelectronics 2010
Observation of nano-indent induced strain fields and dislocation generation in silicon wafers using micro-Raman spectroscopy and white beam X-ray topography. Allen, D; Wittge, J; Zlotos, A; Gorostegui-Colinas, E; Garagorri, J; McNally, P.J; Danilewsky, A.N; Elizalde, M.R. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 2010
Dislocation generation related to micro-cracks in Si wafers: High temperature in situ study with white beam X-ray topography. Danilewsky, A; Wittge, J; Hess, A; Cröll, A; Allen, D; McNally, P; Vagovič, P; Cecilia, A; Li, Z; Baumbach, T; Gorostegui-Colinas, E; Elizalde, M.R. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 2010
Dislocation dynamics and slip band formation in silicon: In-situ study by X-ray diffraction imaging. Danilewsky, A.N; Wittge, J; Croell, A; Allen, D; McNally, P; Vagovič, P; Dos Santos Rolo, T; Li, Z; Baumbach, T; Gorostegui-Colinas, E; Garagorri, J; Elizalde, M.R; Fossati, M.C; Bowen, D.K; Tanner, B.K. Journal of Crystal Growth 2011
Real-time X-ray diffraction imaging for semiconductor wafer metrology and high temperature in situ experiments. Danilewsky, A.N; Wittge, J; Hess, A; Cröll, A; Rack, A; Allen, D; McNally, P; Dos Santos Rolo, T; Vagovič, P; Baumbach, T; Garagorri, J; Elizalde, M.R; Tanner, B.K. Physica Status Solidi (A) Applications and Materials Science 2011