Monitoring of stress reduction in shallow trench isolation CMOS structures via synchrotron X-ray topography, electrical data and Raman spectroscopy. Mcnally, P.J; Curley, J.W; Bolt, M; Reader, A; Tuomi, T; Rantama¨ki, R; Danilewsky, A.N; Dewolf, I. Journal of Materials Science: Materials in Electronics 1999
NCPST develops and applies advanced plasma measurement techniques for detailed fundamental investigations as well as smart process monitoring and control technologies.
About the Research Area
Plasma diagnostics are important for measuring and monitoring species, mechanisms and for process control. These, often most powerful when combined with simulations, provide understanding and insight of the plasma environment. This understanding is a key element in the development of plasma control strategies and solutions for technological development. Sensing technologies are important for real time monitoring of processes.
Diagnostics in the plasma environment are not trivial and are under continuous development as knowledge and technology advances. Advanced diagnostic techniques often exploit new laser technologies, coupled with atomic and molecular physics understanding. Electrical plasma emission is also a powerful tool for plasma sensing and process control. Combining sensors or diagnostics with advanced data science techniques can additionally help provide greater insight into complex plasma systems.
Diagnostics and Sensors Publications
Examination of the structural and optical failure of ultra-bright LEDs under varying degrees of electrical stress using synchrotron X-ray topography and optical emission spectroscopy. Lowney, D; McNally, P.J; O’Hare, M; Herbert, P.A.F; Tuomi, T; Rantamäki, R; Karilahti, M; Danilewsky, A.N. Journal of Materials Science: Materials in Electronics 2001
Investigation of mechanical stresses in underlying silicon due to lead-tin solder bumps via synchrotron X-ray topography and finite element analysis. Kanatharana, J; Pérez-Camacho, J.J; Buckley, T; McNally, P.J; Tuomi, T; Danilewsky, A.N; O’Hare, M; Lowney, D; Chen, W. Materials Research Society Symposium Proceedings 2001
Evaluation of mechanical stresses in silicon substrates due to lead-tin solder bumps via synchrotron X-ray topography and finite element modeling. Kanatharana, J; Pérez-Camacho, J.J; Buckley, T; McNally, P.J; Tuomi, T; Danilewsky, A.N; O’Hare, M; Lowney, D; Chen, W; Rantamäki, R; Knuuttila, L; Riikonen, J. Microelectronic Engineering 2002
Investigation of strain induced effects in silicon wafers due to proximity rapid thermal processing using micro-Raman spectroscopy and synchrotron X-ray topography. Lowney, D; Perova, T.S; Nolan, M; McNally, P.J; Moore, R.A; Gamble, H.S; Tuomi, T; Rantamäki, R; Danilewsky, A.N. Semiconductor Science and Technology 2002
Measurement of quenching coefficients and development of calibration methods for quantitative spectroscopy of plasmas at elevated pressures. Francis, A; Gans, T; Niemi, K; Czarnetzki, U; Schulz-von der Gathen, V; Döbele, H.F. Proceedings of SPIE – The International Society for Optical Engineering 2002
Mapping of mechanical stresses in silicon substrates due to lead-tin solder bump reflow process via synchrotron x-ray topography and finite element modelling. Kanatharana, J; Pérez-Camacho, J.J; Buckley, T; McNally, P.J; Tuomi, T; O’Hare, M; Lowney, D; Chen, W; Rantamäki, R; Knuuttila, L; Riikonen, J. Journal of Physics D: Applied Physics 2003
Geometric linewidth and the impact of thermal processing on the stress regimes induced by electroless copper metallization for Si integrated circuit interconnect technology. McNally, P.J; Kanatharana, J; Toh, B.H.W; McNeill, D.W; Danilewsky, A.N; Tuomi, T; Knuuttila, L; Riikonen, J; Toivonen, J; Simon, R. Journal of Applied Physics 2004