Diagnostics and Sensors

NCPST develops and applies advanced plasma measurement techniques for detailed fundamental investigations as well as smart process monitoring and control technologies.

About the Research Area

Plasma diagnostics are important for measuring and monitoring species, mechanisms and for process control. These, often most powerful when combined with simulations, provide understanding and insight of the plasma environment. This understanding is a key element in the development of plasma control strategies and solutions for technological development. Sensing technologies are important for real time monitoring of processes.
Diagnostics in the plasma environment are not trivial and are under continuous development as knowledge and technology advances. Advanced diagnostic techniques often exploit new laser technologies, coupled with atomic and molecular physics understanding. Electrical plasma emission is also a powerful tool for plasma sensing and process control. Combining sensors or diagnostics with advanced data science techniques can additionally help provide greater insight into complex plasma systems.

Diagnostics and Sensors Publications

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Monitoring of stress reduction in shallow trench isolation CMOS structures via synchrotron X-ray topography, electrical data and Raman spectroscopy. Mcnally, P.J; Curley, J.W; Bolt, M; Reader, A; Tuomi, T; Rantama¨ki, R; Danilewsky, A.N; Dewolf, I. Journal of Materials Science: Materials in Electronics 1999

The quality of 200 mm diameter epitaxial Si wafers for advanced CMOS technology monitored using synchrotron X-ray topography. McNally, P.J; Danilewsky, A.N; Curley, J.W; Reader, A; Rantamäki, R; Tuomi, T; Bolt, M; Taskinen, M. Microelectronic Engineering 1999

Experimental investigation of power deposition and ionization kinetics in an inductively coupled discharge. Rullenraad, W; Crowley, B; Turner, M.M; Vender, D. IEEE International Conference on Plasma Science 2000

On the use of total reflection x-ray topography for the observation of misfit dislocation strain at the surface of a Si/Ge-Si heterostructure. McNally, P.J; Dilliway, G; Bonar, J.M; Willoughby, A; Tuomi, T; Rantamäki, R; Danilewsky, A.N; Lowney, D. Applied Physics Letters 2000

Observation of misfit dislocation strain-induced surface features for a Si/Ge-Si heterostructure using total reflection x-ray topography. Mcnally, P.J; Dilliway, G; Bonar, J.M; Willoughby, A; Tuomi, T; Rantamäki, R; Danilewsky, A.N; Lowney, D. Physica Status Solidi (A) Applied Research 2000

Examination of the structural and optical failure of ultra-bright LEDs under varying degrees of electrical stress using synchrotron X-ray topography and optical emission spectroscopy. Lowney, D; McNally, P.J; O’Hare, M; Herbert, P.A.F; Tuomi, T; Rantamäki, R; Karilahti, M; Danilewsky, A.N. Journal of Materials Science: Materials in Electronics 2001

Investigation of mechanical stresses in underlying silicon due to lead-tin solder bumps via synchrotron X-ray topography and finite element analysis. Kanatharana, J; Pérez-Camacho, J.J; Buckley, T; McNally, P.J; Tuomi, T; Danilewsky, A.N; O’Hare, M; Lowney, D; Chen, W. Materials Research Society Symposium Proceedings 2001

Total reflection X-ray topography for the observation of misfit dislocation strain at the surface of a Si/Ge-Si heterostructure. McNally, P.J; Dilliway, G; Bonar, J.M; Willoughby, A; Tuomi, T; Rantamäki, R; Danilewsky, A.N; Lowney, D. Journal of X-Ray Science and Technology 2001

Determination of quenching coefficients in a hydrogen RF discharge by time-resolved optical emission spectroscopy. Gans, T; Lin, C.C; Schulz-Von Der Gathen, V; Döbele, H.F. Journal of Physics D: Applied Physics 2001

Dynamical diffraction imaging of voids in nearly perfect silicon. Tuomi, T; Rantamäki, R; McNally, P.J; Lowney, D; Danilewsky, A.N; Becker, P. Journal of Physics D: Applied Physics 2001

Design and development of a novel non-contact fibre optic laser scanning system. Abuazza, A; Brabazon, D; El-Baradie, M.A. Conference Proceedings – Lasers and Electro-Optics Society Annual Meeting-LEOS 2002

Evaluation of mechanical stresses in silicon substrates due to lead-tin solder bumps via synchrotron X-ray topography and finite element modeling. Kanatharana, J; Pérez-Camacho, J.J; Buckley, T; McNally, P.J; Tuomi, T; Danilewsky, A.N; O’Hare, M; Lowney, D; Chen, W; Rantamäki, R; Knuuttila, L; Riikonen, J. Microelectronic Engineering 2002

Investigation of strain induced effects in silicon wafers due to proximity rapid thermal processing using micro-Raman spectroscopy and synchrotron X-ray topography. Lowney, D; Perova, T.S; Nolan, M; McNally, P.J; Moore, R.A; Gamble, H.S; Tuomi, T; Rantamäki, R; Danilewsky, A.N. Semiconductor Science and Technology 2002

Measurement of quenching coefficients and development of calibration methods for quantitative spectroscopy of plasmas at elevated pressures. Francis, A; Gans, T; Niemi, K; Czarnetzki, U; Schulz-von der Gathen, V; Döbele, H.F. Proceedings of SPIE – The International Society for Optical Engineering 2002

Phase-resolved emission spectroscopy of a hydrogen rf discharge for the determination of quenching coefficients. Gans, T; Lin, C.C; Schulz–von der Gathen, V; Döbele, H.F. Physical Review A – Atomic, Molecular, and Optical Physics 2003

Mapping of mechanical stresses in silicon substrates due to lead-tin solder bump reflow process via synchrotron x-ray topography and finite element modelling. Kanatharana, J; Pérez-Camacho, J.J; Buckley, T; McNally, P.J; Tuomi, T; O’Hare, M; Lowney, D; Chen, W; Rantamäki, R; Knuuttila, L; Riikonen, J. Journal of Physics D: Applied Physics 2003

Integrated circuit process control monitoring (PCM) data and wafer yield analysed by using synchrotron x-ray topographic measurements. Karilahti, M; Tuomi, T; McNally, P.J. Semiconductor Science and Technology 2003

Correlating integrated circuit process-induced strain and defects against device yield and process control monitoring data. Karilahti, M; Tuomi, T; Rantamäki, R; McNally, P.J; Danilewsky, A.N. Journal of Materials Science: Materials in Electronics 2003

Prospects of phase resolved optical emission spectroscopy as a powerful diagnostic tool for RF-discharges. Gans, T; Schulz-von Der Gathen, V; Döbele, H.F. Contributions to Plasma Physics 2004

Comparison of induced stresses due to electroless versus sputtered copper interconnect technology. McNally, P.J; Kanatharana, J; Toh, B.H.W; McNeill, D.W; Tuomi, T; Danilewsky, A.N; Knuuttila, L; Riikonen, J; Toivonen, J. Semiconductor Science and Technology 2004

The use of neighbourhood intensity comparisons, morphological gradients and Fourier analysis for automated precipitate counting & Pendellösung fringe analysis in X-ray topography. Murphy, G; Whelan, P.F; McNally, P.J; Tuomi, T; Simon, R. EPJ Applied Physics 2004

Geometric linewidth and the impact of thermal processing on the stress regimes induced by electroless copper metallization for Si integrated circuit interconnect technology. McNally, P.J; Kanatharana, J; Toh, B.H.W; McNeill, D.W; Danilewsky, A.N; Tuomi, T; Knuuttila, L; Riikonen, J; Toivonen, J; Simon, R. Journal of Applied Physics 2004

Space and time resolved rotational state populations and gas temperatures in an inductively coupled hydrogen RF discharge. Abdel-Rahman, M; Gans, T; Schulz-Von Der Gathen, V; Döbele, H.F. Plasma Sources Science and Technology 2005

Phase and space resolved optical emission spectroscopic investigations of an inductively coupled RF plasma using an imaging acousto-optic spectrometer. Kampschulte, T; Schulze, J; Gans, T; Czarnetzki, U; Marke, S; Wallendorf, T. Surface and Coatings Technology 2005

Ion flow and sheath physics studies in multiple ion species plasmas using diode laser based laser-induced fluorescence. Severn, G.D; Wang, X; Ko, E; Hershkowitz, N; Turner, M.M; McWilliams, R. Thin Solid Films 2006