Materials Growth and Processing

Simultaneous extraction of recoverable and permanent components contributing to bias-temperature instability. Grasser, T; Kaczer, B; Hehenberger, P; Gös, W; O’Connor, R; Reisinger, H; Gustin, W; Schlünder, C. Technical Digest – International Electron Devices Meeting, IEDM 2007

Frequency dispersion reduction and bond conversion on n -type GaAs by in situ surface oxide removal and passivation. Hinkle, C.L; Sonnet, A.M; Vogel, E.M; McDonnell, S; Hughes, G.J; Milojevic, M; Lee, B; Aguirre-Tostado, F.S; Choi, K.J; Kim, J; Wallace, R.M. Applied Physics Letters 2007

Characterisation and passivation of interface defects in (1 0 0)-Si/SiO2/HfO2/TiN gate stacks. Hurley, P.K; Cherkaoui, K; McDonnell, S; Hughes, G; Groenland, A.W. Microelectronics Reliability 2007

A Dy2O3-capped HfO2 dielectric and TaCx-based metals enabling low-Vt single-metal-single- dielectric gate stack. Chang, V.S; Ragnarsson, L.-Å; Pourtois, G; O’Connor, R; Adelmann, C; Van Elshocht, S; Delabie, A; Swerts, J; Van Der Heyden, N; Conard, T; Cho, H.-J; Akheyar, A; Mitsuhashi, R; Witters, T; O’Sullivan, B.J; Pantisano, L; Rohr, E; Lehnen, P; Kubicek, S; Schram, T; De Gendt, S; Absil, P.P; Biesemans, S. Technical Digest – International Electron Devices Meeting, IEDM 2007

Tuning PMOS Mo(O,N) metal gates to NMOS by addition of DyO capping layer. Petry, J; Singanamalla, R; Xiong, K; Ravit, C; Simoen, E; O’Connor, R; Veloso, A; Adelmann, C; Van Elshocht, S; Paraschiv, V; Brus, S; Van Berkum, J; Kubicek, S; De Meyer, K; Biesemans, S; Hooker, J.C. Technical Digest – International Electron Devices Meeting, IEDM 2007

Evaluation of the chemical, electronic and optoelectronic properties of γ-CuCl thin films and their fabrication on Si substrates. Lucas, F.O; Mitra, A; McNally, P.J; Daniels, S; Bradley, A.L; Taylor, D.M; Proskuryakov, Y.Y; Durose, K; Cameron, D.C. Journal of Physics D: Applied Physics 2007

Towards the fabrication of a UV light source based on CuCl thin films. Mitra, A; Lucas, F.O; O’Reilly, L; McNally, P.J; Daniels, S; Natarajan, G. Journal of Materials Science: Materials in Electronics 2007

Characterisation of n-type γ-CuCl on Si for UV optoelectronic applications. O’Reilly, L; Mitra, A; Lucas, F.O; Natarajan, G; McNally, P.J; Daniels, S; Lankinen, A; Lowney, D; Bradley, A.L; Cameron, D.C. Journal of Materials Science: Materials in Electronics 2007

4H-SiC epitaxial layers grown on on-axis Si-face substrate. Hassan, J; Bergman, J.P; Henry, A; Pedersen, H; McNally, P.J; Janzén, E. Materials Science Forum 2007

An x-ray topographic analysis of the crystal quality of globally available SiC wafers. Brazil, I; McNally, P.J; Ren, N; O’Reilly, L; Danilewsky, A; Tuomi, T.O; Lankinen, A; Säynätjaki, A; Simon, R; Soloviev, S; Rowland, L.B; Sandvik, P.M. Materials Science Forum 2007

An X-ray topographic analysis of the crystal quality of globally ayailable SiC wafers. Brazil, I; McNally, P.J; Ren, N; O’Reilly, L; Danilewsky, A; Tuomi, T.O; Lankinen, A; Säynätjaki, A; Simon, R; Soloviev, S; Rowland, L.B; Sandvik, P.M. Materials Science Forum 2007

Preparation and temperature cycling reliability of electroless Ni(P) under bump metallization. Chen, W.-M; McCloskey, P; Rohan, J.F; Byrne, P; McNally, P.J. IEEE Transactions on Components and Packaging Technologies 2007

Self-organized ZnAl2O4 nanostructures grown on c-sapphire. Grabowska, J; Nanda, K.K; Rajendra Kumar, R.T; Mosnier, J.P; Henry, M.O; Newcomb, S.B; McNally, P; O’Reilly, L; Lu, X; McGlynn, E. Superlattices and Microstructures 2007

Influence of target to substrate distance on the sputtered CuCl film properties. Natarajan, G; Daniels, S; Cameron, D.C; McNally, P.J. Thin Solid Films 2008

Optical properties of CuCl films on silicon substrates. Mitra, A; O’Reilly, L; Lucas, O.F; Natarajan, G; Danieluk, D; Bradley, A.L; McNally, P.J; Daniels, S; Cameron, D.C; Reader, A; Martinez-Rosas, M. Physica Status Solidi (B) Basic Research 2008

Temperature dependent optical properties of UV emitting γ-CuCl thin films. Natarajan, G; Mitra, A; Daniels, S; Cameron, D.C; McNally, P.J. Thin Solid Films 2008

Morphological, optical and electrical properties of γ CuCl deposited by vacuum evaporation. Lucas, F.O; Mitra, A; McNally, P.J; O’Reilly, L; Daniels, S; Natarajan, G; Durose, K; Proskuryakov, Y.Y; Cameron, D.C. Journal of Materials Science: Materials in Electronics 2008

In-situ optical reflectance and synchrotron X-ray topography study of defects in epitaxial dilute GaAsN on GaAs. Reentilä, O; Lankinen, A; Mattila, M; Säynätjoki, A; Tuomi, T.O; Lipsanen, H; O’Reilly, L; McNally, P.J. Journal of Materials Science: Materials in Electronics 2008

Sintering behaviour of cobalt ferrite ceramic. Rafferty, A; Prescott, T; Brabazon, D. Ceramics International 2008

Growth and characterisation of epitaxially ordered zinc aluminate domains on c-sapphire. Grabowska, J; Rajendra Kumar, R.T; McGlynn, E; Nanda, K.K; Newcomb, S.B; McNally, P.J; O’Reilly, L; Mosnier, J.-P; Henry, M.O. Thin Solid Films 2008

X-ray excited optical luminescence of Mg-doped GaN. Lankinen, A; Svensk, O; Mattila, M; Tuomi, T.O; Lipsanen, H; McNally, P.J; O’Reilly, L; Paulmann, C. Journal of X-Ray Science and Technology 2008

Growth and characterisation of thin MgO layers on Si(100) surfaces. Casey, P; Hughes, G; O’connor, E; Long, R.D; Hurley, P.K. Journal of Physics: Conference Series 2008

Dislocations at the interface between sapphire and GaN. Lankinen, A; Lang, T; Suihkonen, S; Svensk, O; Säynätjoki, A; Tuomi, T.O; McNally, P.J; Odnoblyudov, M; Bougrov, V; Danilewsky, A.N; Bergman, P; Simon, R. Journal of Materials Science: Materials in Electronics 2008

Laser surface modification of tool steel for semi-solid steel forming. Brabazon, D; Naher, S; Biggs, P. Solid State Phenomena 2008

Glazing of tool dies for semi-solid steel forming. Brabazon, D; Naher, S; Biggs, P. International Journal of Material Forming 2008

Displacement of charge and conduction current in collisionless planar sheaths during voltage transients. Braithwaite, N.St.J; LauroTaroni, L; Haas, F.A; Turner, M.M. Contributions to Plasma Physics 2008