Materials Growth and Processing

Our materials growth and processing research develops novel materials and processing methods directed towards applications in high-tech microelectronics, sensing, and sustainability, working in collaboration with key industrial and scientific partners.

About the Research Area

Novel materials coupled with precision processing techniques enable unique functional devices on sub-micron and nanometre length scales. The ability to work at the interface of materials growth and processing, and to utilise a wide variety of processing techniques, including non-equilibrium plasma methods, enables us to access a broad range of parameter space and to develop innovative new materials, composites and structures suited to specific applications. Our wide range of analysis and characterisation techniques provide us with detailed understanding of the scientific basis of the material and device behaviour and these techniques are designed to maximise their relevance to the high-tech manufacturing sector by replicating industrial conditions to give our work maximum impact.

Research Projects

Materials Growth and Processing Publications

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Materials Growth and Processing

Progressive breakdown in ultrathin SiON dielectrics and its effect on transistor performance. O’Connor, R; Hughes, G; Degraeve, R; Kaczer, B. Microelectronics Reliability 2005

Materials Growth and Processing

Charge trapping in MOSFETs with HfSiON dielectrics during electrical stressing. O’Connor, R; Hughes, G; Degraeve, R; Kaczer, B. Microelectronic Engineering 2005

Energy Applications, Materials Growth and Processing

Laterally and vertically grown ZnO nanostructures on saphhire. Grabowska, J; Meaney, A; Nanda, K.K; McGlynn, E; Mosnier, J.-P; Henry, M.O. Proceedings of SPIE – The International Society for Optical Engineering 2005

Materials Growth and Processing

Core level photoemission studies of the interaction of pentacene with the Si(1 1 1) (7 × 7) surface. Hughes, G; Carty, D; Cafolla, A.A. Surface Science 2005

Materials Growth and Processing

Low temperature growth GaAs on Ge. Knuuttila, L; Lankinen, A; Likonen, J; Lipsanen, H; Lu, X; McNally, P; Riikonen, J; Tuomi, T. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 2005

Materials Growth and Processing

Synchrotron X-ray topography study of defects in indium antimonide P-I-N structures grown by metal organic vapour phase epitaxy. Riikonen, J; Tuomi, T; Lankinen, A; Sormunen, J; Säynätjoki, A; Knuuttila, L; Lipsanen, H; McNally, P.J; O’Reilly, L; Danilewsky, A; Sipilä, H; Vaijärvi, S; Lumb, D; Owens, A. Journal of Materials Science: Materials in Electronics 2005

Materials Growth and Processing

Raman study of the strain and H2 preconditioning effect on self-assembled Ge island on Si (001). Xu, L; McNally, P.J; Dilliway, G.D.M; Cowern, N.E.B; Jeynes, C; Mendoza, E; Ashburn, P; Bagnall, D.M. Journal of Materials Science: Materials in Electronics 2005

Materials Growth and Processing

X-ray photoemission and X-ray absorption studies of Hf-silicate dielectric layers. O’Connor, R; Hughes, G; Glans, P.-A; Learmonth, T; Smith, K.E. Applied Surface Science 2006

Materials Growth and Processing

Growth of CuCI thin films by magnetron sputtering for ultraviolet optoelectronic applications. Natarajan, G; Daniels, S; Cameron, D.C; O’Reilly, L; Mitra, A; McNally, P.J; Lucas, O.F; Kumar, R.T.R; Reid, I; Bradley, A.L. Journal of Applied Physics 2006

Materials Growth and Processing

Encapsulation of the heteroepitaxial growth of wide band gap γ-CuCl on silicon substrates. Lucas, F.O; O’Reilly, L; Natarajan, G; McNally, P.J; Daniels, S; Taylor, D.M; William, S; Cameron, D.C; Bradley, A.L; Miltra, A. Journal of Crystal Growth 2006

Materials Growth and Processing

Impact on structural, optical and electrical properties of CuCl by incorporation of Zn for n-type doping. O’Reilly, L; Mitra, A; Natarajan, G; Lucas, O.F; McNally, P.J; Daniels, S; Cameron, D.C; Bradley, A.L; Reader, A. Journal of Crystal Growth 2006

Materials Growth and Processing

Stoichiometry control of sputtered CuCl thin films: Influence on ultraviolet emission properties. Natarajan, G; Rajendra Kumar, R.T; Daniels, S; Cameron, D.C; McNally, P.J. Journal of Applied Physics 2006

Materials Growth and Processing

Optical investigations on sputtered CuCl thin films. Natarajan, G; Mitra, A; O’Reilly, L; Daniels, S; Cameron, D.C; McNally, P.J; Lucas, O.F; Bradley, L. Materials Research Society Symposium Proceedings 2006

Energy Applications, Materials Growth and Processing

Identification of donor-related impurities in ZnO using photoluminescence and radiotracer techniques. Johnston, K; Henry, M.O; McCabe, D; McGlynn, E; Dietrich, M; Alves, E; Xia, M. Physical Review B – Condensed Matter and Materials Physics 2006

Energy Applications, Materials Growth and Processing

ZnO thin films grown on platinum (111) buffer layers by pulsed laser deposition. Duclère, J.-R; Mc Loughlin, C; Fryar, J; O’Haire, R; Guilloux-Viry, M; Meaney, A; Perrin, A; McGlynn, E; Henry, M.O; Mosnier, J.-P. Thin Solid Films 2006

Energy Applications, Materials Growth and Processing

P-type conduction above room temperature in nitrogen-doped ZnO thin film grown by plasma-assisted pulsed laser deposition. Chakrabarti, S; Doggett, B; O’Haire, R; McGlynn, E; Henry, M.O; Meaney, A; Mosnier, J.-P. Electronics Letters 2006

Materials Growth and Processing

Crystal defects and strain of epitaxial InP layers laterally overgrown on Si. Lankinen, A; Tuomi, T; Karilahti, M; Zytkiewicz, Z.R; Domagala, J.Z; McNally, P.J; Sun, Y.-T; Olsson, F; Lourdudoss, S. Crystal Growth and Design 2006

Materials Growth and Processing

The erosion-corrosion behaviour of high velocity oxy-fuel (HVOF) thermally sprayed inconel-625 coatings on different metallic surfaces. Al-Fadhli, H.Y; Stokes, J; Hashmi, M.S.J; Yilbas, B.S. Surface and Coatings Technology 2006

Materials Growth and Processing

HVOF coating of welded surfaces: Fatigue and corrosion behaviour of stainless steel coated with Inconel-625 alloy. Al-Fadhli, H.Y; Stokes, J; Hashmi, M.S.J; Yilbas, B.S. Surface and Coatings Technology 2006

Materials Growth and Processing

Non-destructive measurement of deep embedded defects in silicon using photoacoustic microscope (PAM). Xu, L; Lowney, D; McNally, P.J; Fernandez, E.G; Stopford, J. Materials Research Society Symposium Proceedings 2006

Low-temperature Plasmas, Materials Growth and Processing

Influence of plasma parameters on the chemical composition of steady-state fluorocarbon films deposited on carbon-doped low-k dielectric layers during etching. Reid, I; Hughes, G. Semiconductor Science and Technology 2006

Materials Growth and Processing

Photoemission studies of pulsed-RF plasma nitrided ultra-thin SiON dielectric layers. O’Connor, R; McDonnell, S; Hughes, G; Smith, K.E. Surface Science 2006

Materials Growth and Processing

Electrical properties of HfO2 films formed by ion assisted deposition. Cherkaoui, K; Negara, A; McDonnell, S; Hughes, G; Modreanu, M; Hurley, P.K. 2006 25th International Conference on Microelectronics, MIEL 2006 – Proceedings 2006

Materials Growth and Processing

Analysis of the effects of 3DP parameters on part feature dimensional accuracy. Szucs, T.D; Brabazon, D. 18th Solid Freeform Fabrication Symposium, SFF 2007 2007

Materials Growth and Processing

Computational and experimental analysis of particulate distribution during Al-SiC MMC fabrication. Naher, S; Brabazon, D; Looney, L. Composites Part A: Applied Science and Manufacturing 2007