Optimisation and scaling of interfacial GeO 2 layers for high-κ gate stacks on germanium and extraction of dielectric constant of GeO 2. Murad, S.N.A; Baine, P.T; McNeill, D.W; Mitchell, S.J.N; Armstrong, B.M; Modreanu, M; Hughes, G; Chellappan, R.K. Solid-State Electronics 2012
Our materials growth and processing research develops novel materials and processing methods directed towards applications in high-tech microelectronics, sensing, and sustainability, working in collaboration with key industrial and scientific partners.
About the Research Area
Novel materials coupled with precision processing techniques enable unique functional devices on sub-micron and nanometre length scales. The ability to work at the interface of materials growth and processing, and to utilise a wide variety of processing techniques, including non-equilibrium plasma methods, enables us to access a broad range of parameter space and to develop innovative new materials, composites and structures suited to specific applications. Our wide range of analysis and characterisation techniques provide us with detailed understanding of the scientific basis of the material and device behaviour and these techniques are designed to maximise their relevance to the high-tech manufacturing sector by replicating industrial conditions to give our work maximum impact.
Research Projects
