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Materials Growth and Processing - NCPST - Page 10

Materials Growth and Processing

Our materials growth and processing research develops novel materials and processing methods directed towards applications in high-tech microelectronics, sensing, and sustainability, working in collaboration with key industrial and scientific partners.

About the Research Area

Novel materials coupled with precision processing techniques enable unique functional devices on sub-micron and nanometre length scales. The ability to work at the interface of materials growth and processing, and to utilise a wide variety of processing techniques, including non-equilibrium plasma methods, enables us to access a broad range of parameter space and to develop innovative new materials, composites and structures suited to specific applications. Our wide range of analysis and characterisation techniques provide us with detailed understanding of the scientific basis of the material and device behaviour and these techniques are designed to maximise their relevance to the high-tech manufacturing sector by replicating industrial conditions to give our work maximum impact.

Research Projects

Materials Growth and Processing Publications

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Ubiquitous relaxation in BTI stressing-new evaluation and insights. Kaczer, B; Grasser, T; Roussel, Ph.J; Martin-Martinez, J; O’Connor, R; O’Sullivan, B.J; Groeseneken, G. IEEE International Reliability Physics Symposium Proceedings 2008

Indium stability on InGaAs during atomic H surface cleaning. Aguirre-Tostado, F.S; Milojevic, M; Hinkle, C.L; Vogel, E.M; Wallace, R.M; McDonnell, S; Hughes, G.J. Applied Physics Letters 2008

Electrical, structural, and chemical properties of HfO2 films formed by electron beam evaporation. Cherkaoui, K; Monaghan, S; Negara, M.A; Modreanu, M; Hurley, P.K; O’Connell, D; McDonnell, S; Hughes, G; Wright, S; Barklie, R.C; Bailey, P; Noakes, T.C.Q. Journal of Applied Physics 2008

In situ H2S passivation of In0.53Ga 0.47As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric. O’Connor, E; Long, R.D; Cherkaoui, K; Thomas, K.K; Chalvet, F; Povey, I.M; Pemble, M.E; Hurley, P.K; Brennan, B; Hughes, G; Newcomb, S.B. Applied Physics Letters 2008

SILC defect generation spectroscopy in HfSiON using constant voltage stress and substrate hot electron injection. O’Connor, R; Pantisano, L; Degraeve, R; Kauerauf, T; Kaczer, B; Roussel, Ph.J; Groeseneken, G. IEEE International Reliability Physics Symposium Proceedings 2008

Photoemission studies of the interface formation of ultrathin MgO dielectric layers on the oxidised Si(111) surface. Brennan, B; McDonnell, S; Hughes, G. Journal of Physics: Conference Series 2008

Anomalous positive-bias temperature instability of high- κ /metal gate devices with Dy2 O3 capping. O’Connor, R; Chang, V.S; Pantisano, L; Ragnarsson, L.-A; Aoulaiche, M; O’Sullivan, B; Groeseneken, G. Applied Physics Letters 2008

Electron energy dependence of defect generation in high- k gate stacks. O’Connor, R; Pantisano, L; Degraeve, R; Kauerauf, T; Kaczer, B; Roussel, P; Groeseneken, G. Journal of Applied Physics 2008

Anomalous positive-bias temperature instability of high-k/metal gate nMOSFET devices with Dy2O3 capping. O’Connor, R; Chang, V.S; Pantisano, L; Ragnarsson, L.-A; Aoulaiche, M; O’Sullivan, B; Adelmann, C; Van Elshocht, S; Lehnen, P; Yu, H; Groeseneken, G. IEEE International Reliability Physics Symposium Proceedings 2008

Development of a cold flow deposition process for the application of coatings using the HVOF spray process. Mulligan, P; Smith, J; Stokes, J. Arabian Journal for Science and Engineering 2009

Electrical characterization of the soft breakdown failure mode in MgO layers. Miranda, E; O’Connor, E; Cherkaoui, K; Monaghan, S; Long, R; O’Connell, D; Hurley, P.K; Hughes, G; Casey, P. Applied Physics Letters 2009

High resolution photoemission study of SiOx/Si(111) interface disruption following in situ HfO2 deposition. McDonnell, S; Brennan, B; Hughes, G. Applied Physics Letters 2009

Impact of nitridation on recoverable and permanent negative bias temperature instability degradation in high-k /metal-gate p-type metal oxide semiconductor field effect transistors. Aoulaiche, M; Kaczer, B; Roussel, Ph.J; O’Connor, R; Houssa, M; De Gendt, S; Maes, H.E; Groeseneken, G. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 2009

Post-breakdown conduction in metal gate/MgO/InP structures. Miranda, E; O’connor, E; Hughes, G; Casey, P; Cherkaoui, K; Monaghan, S; Long, R; O’connelf, D; Hurley, P.K. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009

The role of nitrogen in HfSiON defect passivation. O’Connor, R; Aoulaiche, M; Pantisano, L; Shickova, A; Degraeve, R; Kaczer, B; Groeseneken, G. IEEE International Reliability Physics Symposium Proceedings 2009

Understanding and importance of defects in advanced materials. Pantisano, L; Trojman, L; Aoulaiche, M; O’Connor, R; Kaczer, B; Groeseneken, G. ECS Transactions 2009

Hybrid organic-inorganic spin-on-glass CuCl films for optoelectronic applications. Alam, M.M; Lucas, F.O; Danieluk, D; Bradley, A.L; Rajani, K.V; Daniels, S; McNally, P.J. Journal of Physics D: Applied Physics 2009

Optical properties of undoped and oxygen doped CuCl films on silicon substrates. Danieluk, D; Bradley, A.L; Mitra, A; O’Reilly, L; Lucas, O.F; Cowley, A; McNally, P.J; Foy, B; McGlynn, E. Journal of Materials Science: Materials in Electronics 2009

Electrical properties of γ-CuCl thin films. Lucas, F.O; McNally, P.J; Daniels, S; Martin Taylor, D; Taylor, D.M. Journal of Materials Science: Materials in Electronics 2009

Structural, optical and electrical properties of Co-evaporated CuCl/KCl films. Lucas, F.O; McNally, P.J; Cowley, A; Daniels, S; Bradley, L; Danieluk, D; Taylor, D.M. Physica Status Solidi (C) Current Topics in Solid State Physics 2009

UV emission on a Si substrate: Optical and structural properties of γ-CuCl on Si grown using liquid phase epitaxy techniques. Cowley, A; Foy, B; Danilieuk, D; McNally, P.J; Bradley, A.L; McGlynn, E; Danilewsky, A.N. Physica Status Solidi (A) Applications and Materials Science 2009

Carbothermal reduction vapor phase transport growth of ZnO nanostructures: Effects of various carbon sources. Biswas, M; McGlynn, E; Henry, M.O; McCann, M; Rafferty, A. Journal of Applied Physics 2009

Growth and field emission properties of ZnO nanostructures deposited by a novel pulsed laser ablation source on silicon substrates. McLoughlin, C; Hough, P; Costello, J; McGlynn, E; Mosnier, J.P. Ultramicroscopy 2009

Strong multiphoton-absorption-induced UV luminescence from ZnO nanorod arrays grown by vapour-liquid-solid mechanism. Das, S.K; Bock, M; Biswas, M; Mcglynn, E; Grunwald, R. CLEO/Europe – EQEC 2009 – European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference 2009

Dislocations and dislocation reduction in space grown GaSb. Danilewsky, A.N; Cröll, A; Tonn, J; Schweizer, M; Lauer, S; Benz, K.W; Tuomi, T; Rantamäki, R; McNally, P; Curley, J. Crystal Research and Technology 2009

FEA of residual stress during HVOF thermal spraying. Stokes, J; Looney, L. Journal of Materials Engineering and Performance 2009

Deposition and characterization of HVOF thermal sprayed functionally graded coatings deposited onto a lightweight material. Hasan, M; Stokes, J; Looney, L; Hashmi, M.S.J. Journal of Materials Engineering and Performance 2009