Energy

The NCPST investigates plasma based technologies for new and improved energy production and storage.

About the Research Area

With environmental requirements there is a need to reduce carbon emissions and our reliance on fossil fuels. This alongside an increase in worldwide energy demand requires investing in clean sustainable energy solutions. We conduct fundamental research on developing energy related technologies. These include nuclear fusion energy production and sustainable energy storage options. Fusion energy has the potential to provide a sustainable solution to global energy needs and in particular provide a continuous baseload power supply which is sustainable, large-scale and environmentally responsible. The conditions required to induce a self-sustaining fusion reaction are almost unbelievably extreme: A temperature of millions of degrees must be produced. This is very challenging, but it seems to be getting closer to realisation. The NCPST is a member of the EUROfusion consortium and part of a large-scale international scientific experiment that is exploring the ability to produce commercial energy from fusion – ITER.

Alongside new sustainable energy sources, storage and transport solutions are equally important. With increasing employment of renewable energy sources e.g. wind and solar, there is a need for flexible storage solutions to handle discontinuous energy supply. Plasma technologies can be quickly and easily turned on and off and used to convert energy into fuels or chemicals. We research plasma gas conversion concepts e.g. CO_2 conversion into value-added chemicals and renewable fuels. The NCPST is a partner in the ITN PIONEER project on Plasma Catalysis for CO_2 Recycling.

Research Projects

Energy Publications

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Study of exciton-polariton modes in nanocrystalline thin films of ZnO using reflectance spectroscopy. Fryar, J; McGlynn, E; Henry, M.O; Mosnier, J.-P. Nanotechnology 2005

Spectroscopic study of the properties of chemically modified ZnO nanowires. Groarke, R; Grabowska, J; Karnanda, K; McGlynn, E; Vos, J.G. Proceedings of SPIE – The International Society for Optical Engineering 2005

Transient enhanced diffusion and deactivation of ion-implanted As in strained Si. Dilliway, G.D.M; Smith, A.J; Hamilton, J.J; Benson, J; Xu, L; McNally, P.J; Cooke, G; Kheyrandish, H; Cowern, N.E.B. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 2005

Synchrotron X-ray topographic study of dislocations and stacking faults in InAs. Lankinen, A; Tuomi, T; Riikonen, J; Knuuttila, L; Lipsanen, H; Sopanen, M; Danilewsky, A; McNally, P.J; O’Reilly, L; Zhilyaev, Y; Fedorov, L; Sipilä, H; Vaijärvi, S; Simon, R; Lumb, D; Owens, A. Journal of Crystal Growth 2005

Strain effects on transient enhanced diffusion and deactivation of arsenic implanted in silicon. Dilliway, G.D.M; Smith, A.J; Hamilton, J.J; Xu, L; McNally, P.J; Cooke, G; Kheyrandish, H; Cowern, N.E.B. Proceedings – Electrochemical Society 2005

Laterally and vertically grown ZnO nanostructures on saphhire. Grabowska, J; Meaney, A; Nanda, K.K; McGlynn, E; Mosnier, J.-P; Henry, M.O. Proceedings of SPIE – The International Society for Optical Engineering 2005

Highly conductive Sb-doped layers in strained Si. Bennett, N.S; Cowern, N.E.B; Smith, A.J; Gwilliam, R.M; Sealy, B.J; O’Reilly, L; McNally, P.J; Cooke, G; Kheyrandish, H. Applied Physics Letters 2006

Enhanced antimony activation for ultra-shallow junctions in strained silicon. Bennett, N.S; Smith, A.J; Beer, C.S; O’Reilly, L; Colombeau, B; Dilliway, G.D; Harper, R; McNally, P.J; Gwilliam, R; Cowern, N.E.B; Sealy, B.J. Materials Research Society Symposium Proceedings 2006

Synchrotron X-ray topography study of defects in epitaxial GaAs on high-quality Ge. Lankinen, A; Knuuttila, L; Tuomi, T; Kostamo, P; Säynätjoki, A; Riikonen, J; Lipsanen, H; McNally, P.J; Lu, X; Sipilä, H; Vaijärvi, S; Lumb, D. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 2006

Strain-enhanced activation of Sb ultrashallow junctions. Bennett, N.S; O’Reilly, L; Smith, A.J; Gwilliam, R.M; McNally, P.J; Cowern, N.E.B; Sealy, B.J. AIP Conference Proceedings 2006

Identification of donor-related impurities in ZnO using photoluminescence and radiotracer techniques. Johnston, K; Henry, M.O; McCabe, D; McGlynn, E; Dietrich, M; Alves, E; Xia, M. Physical Review B – Condensed Matter and Materials Physics 2006

ZnO thin films grown on platinum (111) buffer layers by pulsed laser deposition. Duclère, J.-R; Mc Loughlin, C; Fryar, J; O’Haire, R; Guilloux-Viry, M; Meaney, A; Perrin, A; McGlynn, E; Henry, M.O; Mosnier, J.-P. Thin Solid Films 2006

P-type conduction above room temperature in nitrogen-doped ZnO thin film grown by plasma-assisted pulsed laser deposition. Chakrabarti, S; Doggett, B; O’Haire, R; McGlynn, E; Henry, M.O; Meaney, A; Mosnier, J.-P. Electronics Letters 2006

Control of ZnO nanorod array density by Zn supersaturation variation and effects on field emission. Rajendra Kumar, R.T; McGlynn, E; McLoughlin, C; Chakrabarti, S; Smith, R.C; Carey, J.D; Mosnier, J.P; Henry, M.O. Nanotechnology 2007

(20-23) ZnO thin films grown by pulsed laser deposition on Ce O2 -buffered r -sapphire substrate. Ducl̀re, J.-R; Doggett, B; Henry, M.O; McGlynn, E; Rajendra Kumar, R.T; Mosnier, J.-P; Perrin, A; Guilloux-Viry, M. Journal of Applied Physics 2007

Characterization of nitrogen-doped ZnO thin films grown by plasma-assisted pulsed laser deposition on sapphire substrates. Chakrabarti, S; Doggett, B; O’Haire, R; McGlynn, E; Henry, M.O; Meaney, A; Mosnier, J.-P. Superlattices and Microstructures 2007

Electrical characterisation of phosphorus-doped ZnO thin films grown by pulsed laser deposition. Doggett, B; Chakrabarti, S; O’Haire, R; Meaney, A; McGlynn, E; Henry, M.O; Mosnier, J.P. Superlattices and Microstructures 2007

Morphological control of ZnO nanostructures on silicon substrates. Rajendra Kumar, R.T; Grabowska, J; Mosnier, J.P; Henry, M.O; McGlynn, E. Superlattices and Microstructures 2007

Splitting of point defect energy levels in wurtzite crystals under uniaxial stresses applied along arbitrary directions. McGlynn, E; Henry, M.O. Physical Review B – Condensed Matter and Materials Physics 2007

Growth controlled and laser induced nanostructures in thin nonlinear optical ZnO layers. Grunwald, R; Neumann, U; Seeber, W; Lange, H; Mosnier, J.-R; O’Haire, R; McGlynn, E. Physics and Chemistry of Glasses: European Journal of Glass Science and Technology Part B 2007

Nitrogen doping of ZnO thin films grown by plasma-assisted pulsed-laser deposition. Novotny, M; Duclère, J.-R; McGlynn, E; Henry, O; O’Haire, R; Mosnier, J.-P. Journal of Physics: Conference Series 2007

P-type nitrogen- And phosphorus-doped ZnO thin films grown by pulsed laser deposition on sapphire substrates. Mosnier, J.-P; Chakrabarti, S; Doggett, B; McGlynn, E; Henry, M.O; Meaney, A. Proceedings of SPIE – The International Society for Optical Engineering 2007

Morphological control of ZnO nanostructures grown on silicon. Rajendra Kumar, R.T; Grabowska, J; Mosnier, J.P; Henry, M.O; McGlynn, E. Proceedings of SPIE – The International Society for Optical Engineering 2007

Structural and electrical characterisation of ion-implanted strained silicon. Horan, K; Lankinen, A; O’Reilly, L; Bennett, N.S; McNally, P.J; Sealy, B.J; Cowern, N.E.B; Tuomi, T.O. Materials Science and Engineering B: Solid-State Materials for Advanced Technology 2008

Raman scattering studies of ultrashallow Sb implants in strained Si. O’Reilly, L; Bennett, N.S; McNally, P.J; Sealy, B.J; Cowern, N.E.B; Lankinen, A; Tuomi, T.O. Journal of Materials Science: Materials in Electronics 2008

Dislocations in GaAs p-i-n diodes grown by hydride vapour phase epitaxy. Säynätjoki, A; Lankinen, A; Tuomi, T.O; McNally, P.J; Danilewsky, A; Zhilyaev, Y; Fedorov, L. Journal of Materials Science: Materials in Electronics 2008

Growth of ZnO nanostructures on Au-coated Si: Influence of growth temperature on growth mechanism and morphology. Kumar, R.T.R; McGlynn, E; Biswas, M; Saunders, R; Trolliard, G; Soulestin, B; Duclere, J.-R; Mosnier, J.P; Henry, M.O. Journal of Applied Physics 2008

Antimony for n -type metal oxide semiconductor ultrashallow junctions in strained Si: A superior dopant to arsenic?. Bennett, N.S; Smith, A.J; Gwilliam, R.M; Webb, R.P; Sealy, B.J; Cowern, N.E.B; O’Reilly, L; McNally, P.J. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 2008