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Enhanced Antimony Activation for Ultra-Shallow Junctions in Strained Silicon

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Abstract

Sheet resistance (Rs) reductions are presented for antimony and arsenic doped layers produced in strained Si. Results re-emphasise the Rs reduction for As comes purely as a result of mobility improvement whereas for Sb, a superior lowering is observed from improvements in both mobility and activation. For the first time, strain is shown to enhance the activation of dopant atoms whilst Sb is seen to create stable ultra-shallow junctions. Our results propose Sb as a viable alternative to As for the creation of highly activated, low resistance ultra-shallow junctions for use with strain-engineered CMOS devices.

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Authors and Affiliations

  1. Advanced Technology Institute, University of Surrey, Guildford, United Kingdom

    N. S. Bennett, A. J. Smith, R. Gwilliam, N. E. B. Cowern & B. J. Sealy

  2. Dept. of Physics, University of Warwick, Coventry, United Kingdom

    C. S. Beer

  3. School of Electronic Engineering, Dublin City University, Dublin, Ireland

    L. O’Reilly & P. J. McNally

  4. Chartered Semiconductor Manufacturing Ltd., 60 Woodlands, Singapore

    B. Colombeau

  5. IMEC, Leuven, Belgium

    G. D. Dilliway

  6. IQE Silicon Compounds Ltd., Cardiff, United Kingdom

    R. Harper

Authors
  1. N. S. Bennett
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  2. A. J. Smith
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  3. C. S. Beer
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  4. L. O’Reilly
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  5. B. Colombeau
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  6. G. D. Dilliway
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  7. R. Harper
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  8. P. J. McNally
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  9. R. Gwilliam
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  10. N. E. B. Cowern
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  11. B. J. Sealy
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Bennett, N.S., Smith, A.J., Beer, C.S. et al. Enhanced Antimony Activation for Ultra-Shallow Junctions in Strained Silicon. MRS Online Proceedings Library 912, 203 (2005). https://doi.org/10.1557/PROC-0912-C02-03

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  • DOI: https://doi.org/10.1557/PROC-0912-C02-03

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