Phys. Rev. B 73, 165212 (2006) - Identification of donor-related impurities in ZnO using photoluminescence and radiotracer techniques

Identification of donor-related impurities in ZnO using photoluminescence and radiotracer techniques

Karl Johnston, Martin O. Henry, Deirdre McCabe, Enda McGlynn, Marc Dietrich, Eduardo Alves, and Matthew Xia

Phys. Rev. B 73, 165212 – Published 20 April 2006

Abstract

The results of photoluminescence measurements on ZnO implanted with stable and radioactive isotopes of Zn and Ga are presented. The donor-related exciton feature $I_{8}$ at $3.3600 eV$ is suggested to be due to bound exciton recombination at Ga donors. The $I_{1}$ line at $3.3718 eV$ is also likely to be due to Ga, and is attributed to ionized Ga donor bound exciton recombination. A feature at $3.3225 eV$ is observed following transmutation of radioactive Ga into stable Ge, and is attributed to Ge. Finally, a damage-related band is observed in the region of $1.8 eV$ when the recoil energy of the decay is capable of dislodging the host atoms from their respective lattice sites.

Received 5 November 2004

DOI:https://doi.org/10.1103/PhysRevB.73.165212

©2006 American Physical Society

Authors & Affiliations

Karl Johnston^*, Martin O. Henry, Deirdre McCabe, and Enda McGlynn

National Centre for Plasma Science and Technology, School of Physical Sciences, Dublin City University, Glasnevin, Dublin 9, Ireland

CERN, PH Department, 1211 Geneva 23, Switzerland

Instituto Technológico e Nuclear, P.O. Box 21, 2686-953 Sacavém, Portugal

Department of Physics, Columbia University, 538 W. 120th Street, New York, New York 10027, USA

^*Electronic address: karl.johnston@gmail.com

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Issue

Vol. 73, Iss. 16 — 15 April 2006

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