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Publications - NCPST - Page 30

NCPST Publications

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Experimental investigation of power deposition and ionization kinetics in an inductively coupled discharge. Rullenraad, W; Crowley, B; Turner, M.M; Vender, D. IEEE International Conference on Plasma Science 2000

Non-pulsed emission from the binary system PSR B1259-63. Chernyakova, M; Illarionov, A. Astrophysics and Space Science 2000

Comparative study of the expansion dynamics of Ga+ ions in the laser ablation of Ga and GaN using time-resolved extreme UV absorption spectroscopy. Mah, K.W; Castro, J; Costello, J.T; Kennedy, E.T; Lunney, J.G; McGlynn, E; Van Kampen, P; Mosnier, J.-P. Applied Surface Science 2000

Non-alloyed Pd/Sn and Pd/Sn/Au Ohmic contacts for GaAs MESFETs: technology and performance. Islam, M.S; Mcnally, P.J; Zahirul Alam, A.H.M; Huda, M.Q. Solid-State Electronics 2000

Piezo-spectroscopic induced perturbations for defects in cubic crystals under uniaxial stress applied along arbitrary low-symmetry crystal directions. McGuigan, K.G; McGlynn, E; O’Cairbre, F; Love, J; Henry, M.O. Journal of Physics Condensed Matter 2000

Core-level photoemission studies of the sulphur-terminated Si(100) surface. Roche, J; Ryan, P; Hughes, G. Surface Science 2000

RHEED studies of nucleation of Ge islands on Si(001) and optical properties of ultra-small Ge quantum dots. Markov, V.A; Cheng, H.H; Chia, C.-T; Nikiforov, A.I; Cherepanov, V.A; Pchelyakov, O.P; Zhuravlev, K.S; Talochkin, A.B; McGlynn, E; Henry, M.O. Thin Solid Films 2000

Deposition of transition metal layers on sulphur-terminated InP(100) surfaces studies by core level photoemission spectroscopy. Hughes, G.J; Ryan, P; Quinn, P; Cafolla, A.A. Vacuum 2000

Investigation of the interfacial structure of ultra-thin platinum films using X-ray reflectivity and X-ray photoelectron spectroscopy. Solina, D.M; Cheary, R.W; Swift, P.D; Dligatch, S; McCredie, G.M; Gong, B; Lynch, P. Thin Solid Films 2000

Photoluminescence analysis of semiconductors using radioactive isotopes. Henry, M.O; Deicher, M; Magerle, R; Mcglynn, E; Stotzler, A. Hyperfine Interactions 2000

Defect luminescence of GaN grown by pulsed laser deposition. Mah, K.W; McGlynn, E; Castro, J; Lunney, J.G; Mosnier, J.-P; O’Mahony, D; Henry, M.O. Journal of Crystal Growth 2001

Epitaxial Lateral Overgrowth of GaN on Sapphire – An Examination of Epitaxy Quality Using Synchrotron X-Ray Topography. Mcnally, P.J; Tuomi, T; Lowney, D; Jacobs, K; Danilewsky, A.N; Rantamäki, R; O’Hare, M; Considine, L. Physica Status Solidi (A) Applied Research 2001

Novel nonalloyed thermally stable Pd/Sn and Pd/Sn/Au ohmic contacts for the fabrication of GaAs MESFETs. Islam, M.S; McNally, P.J. IEEE Transactions on Electron Devices 2001

Photoluminescence study of GaN grown by pulsed laser deposition in nitrogen atmosphere. Mah, K.W; McGlynn, E; Mosnier, J.-P; Henry, M.O; Castro, J; O’Mahony, D; Lunney, J.G. Materials Science and Engineering B: Solid-State Materials for Advanced Technology 2001

New type of TiN coating combining broad band visible transparency and solar control. Smith, G.B; Ben-David, A; Swift, P.D. Renewable energy 2001

Core level photoemission studies of the sulphur terminated Ge(100) surface. Roche, J; Ryan, P; Hughes, G.J. Applied Surface Science 2001

Mapping of mechanical, thermomechanical and wire-bond strain fields in packaged Si integrated circuits using synchrotron white beam X-ray topography. McNally, P.J; Rantamäki, R; Tuomi, T; Danilewsky, A.N; Lowney, D; Curley, J.W; Herbert, P.A.F. IEEE Transactions on Components and Packaging Technologies 2001

Diagnostic studies of species concentrations in a capacitively coupled RF plasma containing CH4-H2-Ar. Schulz-Von Der Gathen, V; Röpcke, J; Gans, T; Käning, M; Lukas, C; Döbele, H.F. Plasma Sources Science and Technology 2001

Compact DC model for submicron GaAs MESFETs including gate-source modulation effects. McNally, P.J; Daniels, B. Microelectronics Journal 2001

Quality assessment of sapphire wafers for X-ray crystal optics using white beam synchrotron X-ray topography. Chen, W.M; Mcnally, P.J; Shvydko, Yu.V; Tuomi, T; Lerche, M; Danilewsky, A.N; Kanatharana, J; Lowney, D; O’Hare, M; Knuuttila, L; Rhkonen, J; Rantamäki, R. Physica Status Solidi (A) Applied Research 2001

Uniaxial stress study of the 1026-meV center in Si:Pt. Leitão, J.P; Carmo, M.C; Henry, M.O; McGlynn, E. Physical Review B – Condensed Matter and Materials Physics 2001

The evolution of point defects in semiconductors studied using the decay of implanted radioactive isotopes. Henry, M.O; McGlynn, E; Fryar, J; Lindner, S; Bollmann, J. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 2001

HVOF system definition to maximise the thickness of formed components. Stokes, J; Looney, L. Surface and Coatings Technology 2001

On the use of total reflection x-ray topography for the observation of misfit dislocation strain at the surface of a Si/Ge-Si heterostructure. McNally, P.J; Dilliway, G; Bonar, J.M; Willoughby, A; Tuomi, T; Rantamäki, R; Danilewsky, A.N; Lowney, D. Applied Physics Letters 2000

Observation of misfit dislocation strain-induced surface features for a Si/Ge-Si heterostructure using total reflection x-ray topography. Mcnally, P.J; Dilliway, G; Bonar, J.M; Willoughby, A; Tuomi, T; Rantamäki, R; Danilewsky, A.N; Lowney, D. Physica Status Solidi (A) Applied Research 2000

Looking at the bright side of VUV SASE FELs. Kennedy, E.T. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 2000

Angle-resolved photoelectron spectrometry studies of the autoionization of the 2s2 2p2 P triply excited state of atomic lithium: Experimental results and R-matrix calculations. Diehl, S; Cubaynes, D; Zhou, H.L; VoKy, L; Wuilleumier, F.J; Kennedy, E.T; Bizau, J.M; Manson, S.T; Morgan, T.J; Blancard, C; Berrah, N; Bozek, J. Physical Review Letters 2000

The evolution of 4d photoabsorption in Sb with increasing ionization. D’Arcy, R; Costello, J.T; Kennedy, E.T; McGuinness, C; Mosnier, J.P; O’Sullivan, G. Journal of Physics B: Atomic, Molecular and Optical Physics 2000

Vacuum-UV absorption spectrum of a laser-produced chromium plasma: 3p-subshell photoabsorption by Cr2+ ions. McGuinness, C; Martins, M; Van Kampen, P; Hirsch, J; Kennedy, E.T; Mosnier, J.-P; Whitty, W.W; Costello, J.T. Journal of Physics B: Atomic, Molecular and Optical Physics 2000