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Materials Growth and Processing - NCPST - Page 13

Materials Growth and Processing

Our materials growth and processing research develops novel materials and processing methods directed towards applications in high-tech microelectronics, sensing, and sustainability, working in collaboration with key industrial and scientific partners.

About the Research Area

Novel materials coupled with precision processing techniques enable unique functional devices on sub-micron and nanometre length scales. The ability to work at the interface of materials growth and processing, and to utilise a wide variety of processing techniques, including non-equilibrium plasma methods, enables us to access a broad range of parameter space and to develop innovative new materials, composites and structures suited to specific applications. Our wide range of analysis and characterisation techniques provide us with detailed understanding of the scientific basis of the material and device behaviour and these techniques are designed to maximise their relevance to the high-tech manufacturing sector by replicating industrial conditions to give our work maximum impact.

Research Projects

Materials Growth and Processing Publications

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High resolution photoemission study of the thermal stability of the HfO2/SiOx/Si(111) system. McDonnell, S; Brennan, B; Casey, P; Hughes, G.J. Surface Science 2011

The effect of a post processing thermal anneal on pre-existing and stress induced electrically active defects in ultra-thin SiON dielectric layers. Oconnor, R; Hughes, G. Microelectronics Reliability 2011

Optimisation and scaling of interfacial GeO 2 layers for high-k gate stacks on germanium and extraction of dielectric constant of GeO 2. Murad, S.N.A; McNeill, D.W; Mitchell, S.J.N; Armstrong, B.M; Modreanu, M; Hughes, G; Chellappan, R.K. 2011 International Semiconductor Device Research Symposium, ISDRS 2011 2011

Microscopic origins of the surface exciton photoluminescence peak in ZnO nanostructures. Biswas, M; Jung, Y.S; Kim, H.K; Kumar, K; Hughes, G.J; Newcomb, S; Henry, M.O; McGlynn, E. Physical Review B – Condensed Matter and Materials Physics 2011

Growth of n-type γ-CuCl with improved carrier concentration by pulsed DC sputtering: Structural, electronic and UV emission properties. Rajani, K.V; Olabanji Lucas, F; Daniels, S; Danieluk, D; Bradley, A.L; Cowley, A; Alam, M.M; McNally, P.J. Thin Solid Films 2011

CuBr blue light emitting electroluminescent thin film devices. Lucas, F.O; Cowley, A; Daniels, S; Mcnally, P.J. Physica Status Solidi (C) Current Topics in Solid State Physics 2011

Evaluation of conduction mechanism and electronic parameters for Au/organic-inorganic CuCl hybrid film/ITO structures. Alam, M.M; Cowley, A; Rajani, K.V; Daniels, S; McNally, P.J. Semiconductor Science and Technology 2011

Observation of peripheral charge induced low frequency capacitance-voltage behaviour in metal-oxide-semiconductor capacitors on Si and GaAs substrates. O’Connor, E; Cherkaoui, K; Monaghan, S; O’Connell, D; Povey, I; Casey, P; Newcomb, S.B; Gomeniuk, Y.Y; Provenzano, G; Crupi, F; Hughes, G; Hurley, P.K. Journal of Applied Physics 2012

A combined hard x-ray photoelectron spectroscopy and electrical characterisation study of metal/SiO2/Si(100) metal-oxide- semiconductor structures. Walsh, L.A; Hughes, G; Hurley, P.K; Lin, J; Woicik, J.C. Applied Physics Letters 2012

High resolution synchrotron radiation based photoemission study of the in situ deposition of molecular sulphur on the atomically clean InGaAs surface. Chauhan, L; Hughes, G. Journal of Applied Physics 2012

Improved reliability of Al 2O 3/InGaAs/InP MOS structures through in-situ forming gas annealing. O’Connor, R; Cherkaoui, K; Nagle, R; Schmidt, M; Povey, I.M; Pemble, M; Hurley, P.K. IEEE International Reliability Physics Symposium Proceedings 2012

Microscopic origins of the surface exciton photoluminescence in ZnO nanostructures. Biswas, M; Jung, Y.S; Kim, H.K; Kumar, K; Hughes, G.J; Newcomb, S; Henry, M.O; McGlynn, E. Proceedings of SPIE – The International Society for Optical Engineering 2012

Protection and functionalisation of silver as an optical sensing platform for highly sensitive SPR based analysis. Manickam, G; Gandhiraman, R; Vijayaraghavan, R.K; Kerr, L; Doyle, C; Williams, D.E; Daniels, S. Analyst 2012

Effect on microstructure of TiO2 rate in Al2O3-TiO2 composite coating produced using plasma spray method. Islak, S; Buytoz, S; Ersoz, E; Orhan, N; Stokes, J; Hashmi, M.S; Somunkiran, I; Tosun, N. Optoelectronics and Advanced Materials, Rapid Communications 2012

Structural investigation of MOVPE-grown GaAs on Ge by x-ray techniques. Wong, C.S; Bennett, N.S; Galiana, B; Tejedor, P; Benedicto, M; Molina-Aldareguia, J.M; McNally, P.J. Semiconductor Science and Technology 2012

Thermal simulation of laser surface modification of H13 die steel. Aqida, S.N; Naher, S; Brabazon, D. Key Engineering Materials 2012

Microstructure and microhardness characterization of Cr3C 2-SiC coatings produced by the plasma transferred arc method. Islak, S; Eski, Ö; Buytoz, S; Karagöz, M; Stokes, J. Materialpruefung/Materials Testing 2012

Chemical and structural investigations of the interactions of Cu with MnSiO 3 diffusion barrier layers. Casey, P; Bogan, J; McCoy, A; Lozano, J.G; Nellist, P.D; Hughes, G. Journal of Applied Physics 2012

Chemical and structural investigations of the incorporation of metal manganese into ruthenium thin films for use as copper diffusion barrier layers. McCoy, A.P; Casey, P; Bogan, J; Lozano, J.G; Nellist, P.D; Hughes, G. Applied Physics Letters 2012

Photoemission study of the growth of Mn silicate barrier layers on ultra low-k carbon doped oxide surfaces. Bogan, J; Casey, P; McCoy, A; Hughes, G. 2012 IEEE International Interconnect Technology Conference, IITC 2012 2012

(S)TEM analysis of the interdiffusion and barrier layer formation in Mn/Cu heterostructures on SiO2 for interconnect technologies. Lozano, J.G; Lozano-Perez, S; Bogan, J; Wang, Y.C; Brennan, B; Nellist, P.D; Hughes, G. Journal of Physics: Conference Series 2012

Growth characteristics of Mn silicate barrier layers on SiO 2. Casey, P; Bogan, J; McCoy, A.P; Lozano, J.G; Nellist, P.D; Hughes, G. 2012 IEEE International Interconnect Technology Conference, IITC 2012 2012

STEM Analysis Of Cu(Mn) Self-Forming Diffusion Barriers on SiO2 For Applications In The Semiconductor Industry. Lozano, J.G; Bogan, J; Casey, P; McCoy, A; Hughes, G; Nellist, P.D. Microscopy and Microanalysis 2012

Observation of epitaxially ordered twinned zinc aluminate “nanoblades” on c-sapphire. McGlynn, E; Twamley, B; Nanda, K.K; Grabowska, J; Kumar, R.T.R; Newcomb, S.B; Mosnier, J.-P; Henry, M.O. Journal of Materials Science: Materials in Electronics 2012

High speed laser surface modification of Ti-6Al-4V. Chikarakara, E; Naher, S; Brabazon, D. Surface and Coatings Technology 2012