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Publications - NCPST - Page 28

NCPST Publications

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Thermally stable Pd/Sn and Pd/Sn/Au Ohmic contacts to n-type GaAs. Islam, M.S; McNally, P.J. Thin Solid Films 1998

Properties of Pd/Sn Ohmic contacts on n-GaAs. Islam, M.S; McNally, P.J; Cameron, D.C; Herbert, P.A.F. Journal of Materials Processing Technology 1998

Effects of metallization thickness on the thermal and long-term stability of Pd/Sn Ohmic contacts to n-GaAs. Islam, M.S; Mcnally, P.J. Physica Status Solidi (A) Applied Research 1998

An X-ray photoelectron spectroscopy study of the HF etching of native oxides on Ge(111) and Ge(100) surfaces. Deegan, T; Hughes, G. Applied Surface Science 1998

Micro-Raman Spectroscopy Evaluation of the Local Mechanical Stress in Shallow Trench Isolation CMOS Structures: Correlation With Defect Generation and Diode Leakage. De Wolf, I; Groeseneken, G; Maes, H.E; Bolt, M; Barla, K; Reader, A; McNally, P.J. Conference Proceedings from the International Symposium for Testing and Failure Analysis 1998

Absorption spectroscopy of an expanding laser produced lithium plasma in the extreme ultraviolet using the Dual Laser Plasma technique. Whitty, W; Costello, J; Kennedy, E; Moloney, C; Mosnier, J.-P. Applied Surface Science 1998

An evaluation of liquid phase epitaxial InGaAs/InAs heterostructures for infrared devices using synchrotron x-ray topography. McNally, P.J; Curley, J; Krier, A; Mao, Y; Richardson, J; Tuomi, T; Taskinen, M; Rantamäki, R; Prieur, E; Danilewsky, A. Semiconductor Science and Technology 1998

Ambient scanning tunnelling spectroscopy of sulphur passivated InP(100) surfaces. Hearne, S; Hughes, G. Applied Surface Science 1998

A simple one-dimensional model for the explanation and analysis of GaAs MESFET behavior. Baric, A; McNally, P.J. IEEE Transactions on Education 1998

Use of X-ray topography to map mechanical, thermomechanical and wire-bond strain fields in packaged integrated circuits. McNally, Patrick J; Rantamaki, R; Curley, John W; Tuomi, T; Danilewsky, A.N; Herbert, P.A.F. Materials Research Society Symposium – Proceedings 1998

Synchrotron X-ray topographic study of dislocations in GaAs detector crystals grown by vertical gradient freeze technique. Tuomi, T; Juvonen, M; Rantamaki, R; Hjelt, K; Bavdaz, M; Nenonen, S; Gagliardi, M.-A; McNally, P.J; Danilewsky, A.N; Prieur, E; Taskinen, M; Tuominen, M. Materials Research Society Symposium – Proceedings 1998

Photoluminescence spectroscopy of an al-c complex in silicon. McGlynn, E; Henry, M.O; McLoughlin, P. Physical Review B – Condensed Matter and Materials Physics 1999

Study of bound exciton excited state structure using photothermal ionisation spectroscopy. Gibson, M; McGlynn, E; Henry, M.O. Physica B: Condensed Matter 1999

Cadmium-lithium defects in silicon. Frehill, C.A; Henry, M.O; McGlynn, E; Lightowlers, E.G; Safanov, A. Materials Science and Engineering B: Solid-State Materials for Advanced Technology 1999

Modification of formate stability by alloying: The Cu(100)-c(2 × 2)-Pt system. Reilly, J.P; O’Connell, D; Barnes, C.J. Journal of Physics Condensed Matter 1999

Synchrotron x-ray topographic and high-resolution diffraction analysis of mask-induced strain in epitaxial laterally overgrown GaAs layers. Rantamäki, R; Tuomi, T; Zytkiewicz, Z.R; Domagala, J; McNally, P.J; Danilewsky, A.N. Journal of Applied Physics 1999

Synchrotron X-ray topography analysis of GaAs layers grown on GaAs substrates by liquid phase epitaxial lateral overgrowth. Rantamäki, R; Tuomi, T; Zytkiewicz, Z.R; Dobosz, D; McNally, P.J. Journal of Physics D: Applied Physics 1999

Epitaxial lateral overgrowth of gallium arsenide studied by synchrotron topography. Rantamäki, R; Tuomi, T; Zytkiewicz, Z.R; Dobosz, D; Mcnally, P.J; Danilewsky, A.N. Materials Research Society Symposium – Proceedings 1999

Oxidation and carbon contamination in GaAs (100) wet treatments. Elbahnasawy, R.F; Mclncrncy, J.G; Hughes, G. Materials Research Society Symposium – Proceedings 1999

Core level photoemission study of the deposition of thin iron layers on sulphur terminated InP(100) surfaces. Hughes, G.J; Ryan, P; Cafolla, A.A; Quinn, P. Applied Surface Science 1999

Core-level photoemission study of the deposition of thin manganese layers on sulphur-terminated InP(100) surfaces. Hughes, G.J; Ryan, P; Quinn, P; Cafolla, A.A. Surface Science 1999

Anodic sulfidation and model characterisation of gaas (100) in (nh4)2sx solution. Elbahnasawy, R.F; Mclnerney, J.G; Ryan, P; Hughes, G; Murtagh, M. Materials Research Society Symposium – Proceedings 1999

The 777 meV photoluminescence band in Si : Pt. Leitão, J.P; Carmo, M.C; Henry, M.O; McGlynn, E; Bolmann, J; Lindner, S. Physica B: Condensed Matter 1999

Light to light efficiencies in luminescent solar concentrators. Swift, Paul D; Smith, Geoff B; Franklin, Jim B. Proceedings of SPIE – The International Society for Optical Engineering 1999

Diagnostic of an expanding laser-produced lithium plasma using ICCD frame photography and shadowgraphy. Whitty, W; Mosnier, J.-P. Applied Surface Science 1998

Comparative analysis of synchrotron X-ray transmission and reflection topography techniques applied to Epitaxial Laterally Overgrown GaAs layers. Rantamäki, R; Tuomi, T; Zytkiewicz, Z.R; McNally, P.J; Danilewsky, A.N. Journal of X-Ray Science and Technology 1998

Grazing incidence synchrotron X-ray topography as a tool for denuded zone studies of silicon wafers. Rantamäki, R; Tuomi, T; McNally, P.J; Curley, J; Danilewsky, A. Journal of X-Ray Science and Technology 1998

Designing a new physics laboratory programme for first-year engineering students. Kirkup, L; Johnson, S; Hazel, E; Cheary, R.W; Green, D.C; Swift, P; Holliday, W. Physics Education 1998

Extreme-UV photoabsorption spectrum of a laser-produced silicon plasma: Evidence for metastable Si+ ions. Costello, J.T; Kennedy, E.T; Mosnier, J.-P; Sayyad, M.H; McGuinness, C. Journal of Physics B: Atomic, Molecular and Optical Physics 1998

Photoelectron spectroscopy studies of hollow lithium states. Wuilleumier, F.J; Diehl, S; Cubaynes, D; Bizau, J.-M; Kennedy, E.T. Journal of Electron Spectroscopy and Related Phenomena 1998