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Publications - NCPST - Page 36

NCPST Publications

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Prospects of phase resolved optical emission spectroscopy as a powerful diagnostic tool for RF-discharges. Gans, T; Schulz-von Der Gathen, V; Döbele, H.F. Contributions to Plasma Physics 2004

Analysis of the excited argon atoms in the GEC RF reference cell by means of one-dimensional PIC simulations. Lauro-Taroni, L; Turner, M.M; Braithwaite, N.St.J. Journal of Physics D: Applied Physics 2004

Refractive elements produced in photopolymer layers. O’Neill, F.T; Carr, A.J; Daniels, S.M; Gleeson, M.R; Kelly, J.V; Lawrence, J.R; Sheridan, J.T. Proceedings of SPIE – The International Society for Optical Engineering 2004

Comparison of induced stresses due to electroless versus sputtered copper interconnect technology. McNally, P.J; Kanatharana, J; Toh, B.H.W; McNeill, D.W; Tuomi, T; Danilewsky, A.N; Knuuttila, L; Riikonen, J; Toivonen, J. Semiconductor Science and Technology 2004

The use of neighbourhood intensity comparisons, morphological gradients and Fourier analysis for automated precipitate counting & Pendellösung fringe analysis in X-ray topography. Murphy, G; Whelan, P.F; McNally, P.J; Tuomi, T; Simon, R. EPJ Applied Physics 2004

Teaching a single physics module through problem based learning in a lecture-based curriculum. Van Kampen, P; Banahan, C; Kelly, M; McLoughlin, E; O’Leary, E. American Journal of Physics 2004

A new science competition for secondary school students: The first European Union Science Olympiad. Van Kampen, P; Browne, W.R; Burke, M; Cotter, M.A; James, P; McGlynn, E; O’Kennedy, R; Smyth, P; Whelan, G. European Journal of Physics 2004

Instrumental contributions to the time-resolved optogalvanic signal in a hollow cathode discharge. Zhechev, D; Bundaleska, N; Costello, J.T. Journal of Physics D: Applied Physics 2005

Photoelectron emission and its instrumental effect on optogalvanic measurements in a hollow cathode discharge. Zhechev, D; Bundaleska, N; Costello, J.T; Todorov, D. Opto-Electronics Review 2005

Room-temperature ultraviolet luminescence from γ-CuCl grown on near lattice-matched silicon. O’Reilly, L; Lucas, O.F; McNally, P.J; Reader, A; Natarajan, G; Daniels, S; Cameron, D.C; Mitra, A; Martinez-Rosas, M; Bradley, A.L. Journal of Applied Physics 2005

Growth and characterisation of wide-bandgap, I-VII optoelectronic materials on silicon. O’Reilly, L; Natarajan, G; McNally, P.J; Cameron, D; Lucas, O.F; Martinez-Rosas, M; Bradley, L; Reader, A; Daniels, S. Journal of Materials Science: Materials in Electronics 2005

The use of wide-bandgap CuCl on silicon for ultra-violet photonics. O’Reilly, L; Natarajan, G; McNally, P.J; Daniels, S; Lucas, O.F; Mitra, A; Martinez-Rosas, M; Bradley, L; Reader, A; Cameron, D. Proceedings of SPIE – The International Society for Optical Engineering 2005

Structural and optoelectronic properties of sputtered copper (I) Chloride. Natarajan, G; O’Reilly, L; Daniels’, S; Cameron, D.C; J.mcnally, P; Lucas, O; Reader, A; Mitra, A; Bradley, L. Proceedings of SPIE – The International Society for Optical Engineering 2005

Surface excitonic emission and quenching effects in ZnO nanowire/nanowall systems: Limiting effects on device potential. Grabowska, J; Meaney, A; Nanda, K.K; Mosnier, J.-P; Henry, M.O; Duclère, J.-R; McGlynn, E. Physical Review B – Condensed Matter and Materials Physics 2005

Studying the growth conditions, the alignment and structure of ZnO nanorods. Grabowska, J; Nanda, K.K; McGlynn, E; Mosnier, J.-P; Henry, M.O. Surface and Coatings Technology 2005

Properties of Li-, P- and N-doped ZnO thin films prepared by pulsed laser deposition. Duclère, J.-R; Novotny, M; Meaney, A; O’Haire, R; McGlynn, E; Henry, M.O; Mosnier, J.-P. Superlattices and Microstructures 2005

Synthesis and photoluminescence of ZnO nanowires/nanorods. Grabowska, J; Nanda, K.K; McGlynn, E; Mosnier, J.-P; Henry, M.O; Beaucamp, A; Meaney, A. Journal of Materials Science: Materials in Electronics 2005

Fabrication of p-type doped ZnO thin films using pulsed laser deposition. Duclère, J.-R; O’Haire, R; Meaney, A; Johnston, K; Reid, I; Tobin, G; Mosnier, J.P; Guilloux-Viry, M; McGlynn, E; Henry, M.O. Journal of Materials Science: Materials in Electronics 2005

Comparison of structural, optical and electrical properties of undoped ZnO thin films grown on r- and c-Al2O3 substrates using pulsed laser deposition. Meaney, A; Duclere, J.-R; McGlynn, E; Mosnier, J.-P; O’Haire, R; Henry, M.O. Superlattices and Microstructures 2005

Study of exciton-polariton modes in nanocrystalline thin films of ZnO using reflectance spectroscopy. Fryar, J; McGlynn, E; Henry, M.O; Mosnier, J.-P. Nanotechnology 2005

Spectroscopic study of the properties of chemically modified ZnO nanowires. Groarke, R; Grabowska, J; Karnanda, K; McGlynn, E; Vos, J.G. Proceedings of SPIE – The International Society for Optical Engineering 2005

Transient enhanced diffusion and deactivation of ion-implanted As in strained Si. Dilliway, G.D.M; Smith, A.J; Hamilton, J.J; Benson, J; Xu, L; McNally, P.J; Cooke, G; Kheyrandish, H; Cowern, N.E.B. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 2005

Synchrotron X-ray topographic study of dislocations and stacking faults in InAs. Lankinen, A; Tuomi, T; Riikonen, J; Knuuttila, L; Lipsanen, H; Sopanen, M; Danilewsky, A; McNally, P.J; O’Reilly, L; Zhilyaev, Y; Fedorov, L; Sipilä, H; Vaijärvi, S; Simon, R; Lumb, D; Owens, A. Journal of Crystal Growth 2005

Strain effects on transient enhanced diffusion and deactivation of arsenic implanted in silicon. Dilliway, G.D.M; Smith, A.J; Hamilton, J.J; Xu, L; McNally, P.J; Cooke, G; Kheyrandish, H; Cowern, N.E.B. Proceedings – Electrochemical Society 2005

Erratum: Optical absorption of a Li-related impurity in ZnO(Physica B: Condensed Matter). Mc Cabe, D; Johnston, K; Henry, M.O; Mc Glynn, E; Alves, E; Davies, J.J. Physica B: Condensed Matter 2004

Infrared photoluminescence imaging of infrared materials: HgCdTe/Cd(Zn)Te heterostructures. Sochinskii, N.V; Babentsov, V.N; McNally, P.J; Dundee, A; Corsi, C. Infrared Physics and Technology 2004

Geometric linewidth and the impact of thermal processing on the stress regimes induced by electroless copper metallization for Si integrated circuit interconnect technology. McNally, P.J; Kanatharana, J; Toh, B.H.W; McNeill, D.W; Danilewsky, A.N; Tuomi, T; Knuuttila, L; Riikonen, J; Toivonen, J; Simon, R. Journal of Applied Physics 2004

XMM-Newton observations of PSR B1259-63 near the 2004 periastron passage. Chernyakova, M; Lutovinov, A; Rodriguez, J; Johnston, S. Proceedings of the International Astronomical Union 2005

External circuit system effects on chlorine plasma instabilities. Ellingboe, A.R; Law, V.J; Soberon, F; Garcia, F; Graham, W. Electronics Letters 2005