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Fabrication of p-type doped ZnO thin films using pulsed laser deposition

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Abstract

Two new methods were investigated for the fabrication of p-type doped ZnO thin films in a conventional pulsed laser deposition apparatus, but using only pure materials as targets. One of these is a sequential method and consists in firing alternatively the laser on a pure ZnO target and either a monocrystalline InP target (for phosphorus doping) or a Bi2O3 ceramic target (for bismuth doping). The other method consists in taking advantage of the lithium diffusion into a ZnO thin film while being deposited on a c-LiNbO3 substrate at high temperature. Some structural and electronic properties of the ZnO material obtained using these methods were measured using secondary ion mass spectrometry, X-ray diffraction, laser photoluminescence and Hall apparatus respectively and compared with those obtained for pure n-type thin films. The main results of this study are as follows. The sequential deposition method was successful in incorporating InP in ZnO films but led to inhomogeneous In and P spatial distributions, while segregation of Bi2O3 within the ZnO was evidenced by both the X-ray diffraction and photoluminescence results. Electrical measurements have revealed n-type conductivity for the ZnO/InP and the ZnO/c-LiNbO3 thin films and a peculiar behaviour for the ZnO/Bi2O3 samples which could point out to successful p-type doping for films containing smaller amounts of Bi2O3.

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Author notes

  1. J. R. Duclère

    Present address: National Centre for Plasma Science & Technology, Dublin City University, Glasnevin, Dublin 9, Ireland

Authors and Affiliations

  1. National Centre for Plasma Science & Technology, School of Physical Sciences, Dublin City University, Glasnevin, Dublin 9, Ireland

    J. R. Duclère, R. O’Haire, A. Meaney, K. Johnston, G. Tobin, J. P. Mosnier, E. McGlynn & M. O. Henry

  2. Surface Science Research Laboratory, School of Physical Sciences, Dublin City University, Glasnevin, Dublin 9, Ireland

    I. Reid

  3. Laboratoire de Chimie du Solide et Inorganique Moléculaire, Institut de Chimie de Rennes, Université de Rennes 1, Av. du Gal Leclerc, 35042, Rennes, France

    M. Guilloux-Viry

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  1. J. R. Duclère
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  2. R. O’Haire
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  3. A. Meaney
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  4. K. Johnston
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  5. I. Reid
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  8. M. Guilloux-Viry
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Correspondence to J. R. Duclère.

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Duclère, J.R., O’Haire, R., Meaney, A. et al. Fabrication of p-type doped ZnO thin films using pulsed laser deposition. J Mater Sci: Mater Electron 16, 421–427 (2005). https://doi.org/10.1007/s10854-005-2308-2

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  • DOI: https://doi.org/10.1007/s10854-005-2308-2

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