Characterisation of PECVD silicon films deposited at 162MHz, using a large area, scalable, multi-tile-electrode plasma source. Monaghan, E; Michna, T; O’Hara, N; Gaman, C; O’Farrel, D; Ryan, K; Adley, D; Perova, T.S; Drews, B; Jaskot, M; Ellingboe, A.R. 37th EPS Conference on Plasma Physics 2010, EPS 2010 2010

Leave a Reply

Your email address will not be published. Required fields are marked *

Fill out this field
Fill out this field
Please enter a valid email address.
You need to agree with the terms to proceed