Evaluation of the effect of Nd: YVO 4 laser parameters on internal micro-channel fabrication in polycarbonate. Karazi, S.M; Brabazon, D. NCTA 2011 – Proceedings of the International Conference on Neural Computation Theory and Applications 2011
A systematic study of (NH4) 2 S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2 O3 / In0.53 Ga0.47 As/InP system for n -type and p -type In0.53 Ga0.47 As epitaxial layers. O’Connor, É; Brennan, B; Djara, V; Cherkaoui, K; Monaghan, S; Newcomb, S.B; Contreras, R; Milojevic, M; Hughes, G; Pemble, M.E; Wallace, R.M; Hurley, P.K. Journal of Applied Physics 2011
Optimisation and scaling of interfacial GeO 2 layers for high-k gate stacks on germanium and extraction of dielectric constant of GeO 2. Murad, S.N.A; McNeill, D.W; Mitchell, S.J.N; Armstrong, B.M; Modreanu, M; Hughes, G; Chellappan, R.K. 2011 International Semiconductor Device Research Symposium, ISDRS 2011 2011
Characterisation of thin film silicon films deposited by plasma enhanced chemical vapour deposition at 162 MHz, using a large area, scalable, multi-tile-electrode plasma source. Monaghan, E; Michna, T; Gaman, C; O’Farrel, D; Ryan, K; Adley, D; Perova, T.S; Drews, B; Jaskot, M; Ellingboe, A.R. Thin Solid Films 2011