Improved buffered block forward backward method applied to 3D scattering problems. Mullen, M; Brennan, C; Downes, T. IET Conference Publications 2008
Antimony for n -type metal oxide semiconductor ultrashallow junctions in strained Si: A superior dopant to arsenic?. Bennett, N.S; Smith, A.J; Gwilliam, R.M; Webb, R.P; Sealy, B.J; Cowern, N.E.B; O’Reilly, L; McNally, P.J. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 2008
In situ H2S passivation of In0.53Ga 0.47As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric. O’Connor, E; Long, R.D; Cherkaoui, K; Thomas, K.K; Chalvet, F; Povey, I.M; Pemble, M.E; Hurley, P.K; Brennan, B; Hughes, G; Newcomb, S.B. Applied Physics Letters 2008