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Publications - NCPST - Page 26

NCPST Publications

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International intercomparison of scanning tunneling microscopy. Barbato, G; Carneiro, K; Cuppini, D; Garnaes, J; Gori, G; Hughes, G; Jensen, C.P; Jørgensen, J.F; Jusko, O; Livi, S; McQuoid, H; Nielsen, L; Picotto, G.B; Wilkening, G. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 1996

Effects of annealing cycles on the electrical and morphological characteristics of Pd/Sn ohmic contacts to n-GaAs. Islam, M.S; McNally, Patrick J; Cameron, D.C; Herbert, P.A.F. Proceedings of the Mediterranean Electrotechnical Conference – MELECON 1996

Macroparticles in films deposited by steered cathodic arc. Swift, P.D. Journal of Physics D: Applied Physics 1996

Examination of thin film uniformity at the bottom of a hole structure using a 3D sputter simulation package. Daniels, S; Cameron, D.C. Journal de Physique III 1996

Synchrotron x-ray topographic analysis of the impact of processing steps on the fabrication of algaas/ingaas p-HEMT’s. McNally, P.J; Tuomi, T; Herbert, P.A.F; Baric, A; Äyräs, P; Karilahti, M; Lipsancn, H; Tromby, M. IEEE Transactions on Electron Devices 1996

Photoluminescence study of cadmium-related defects in oxygen-rich silicon. McGlynn, E; Henry, M; McGuigan, K. Physical Review B – Condensed Matter and Materials Physics 1996

A complex luminescent defect in Be-doped oxygen-rich silicon. Daly, S.E; Henry, M.O; McGuigan, K.G; Do Carmo, M.C. Semiconductor Science and Technology 1996

The complexing of oxygen with the Group II impurities Be, Cd and Zn in silicon. Daly, S.E; McGlynn, E; Henry, M.O; Campion, J.D; McGuigan, K.G; Do Carmo, M.C; Nazaré, M.H. Materials Science and Engineering B 1996

A photoluminescence study of a series of closely related axial defects of monoclinic I and rhombic I symmetry in oxygen-rich, zinc-doped silicon. McGuigan, K.G; Henry, M.O; Campion, J.D; Daly, S.E; McGlynn, E; Do Carmo, M.C. Semiconductor Science and Technology 1996

Proceedings of the 1995 E-MRS Spring Meeting. Daly, S.E; McGlynn, E; Henry, M.O; Campion, J.D; McGuigan, K.G; do Carmo, M.C; Nazare, M.H. Materials science & engineering. B, Solid-state materials for advanced technology 1996

Stress induced charge effects in AlGaAs/GaAs heterojunction bipolar transistors. Bajdechi, O; McNally, P.J. Proceedings of the International Semiconductor Conference, CAS 1996

Absence of long-range ordered reconstruction on the GaAs(311)A surface. Moriarty, P; Ma, Y; Dunn, A; Beton, P; Henini, M; McGinley, C; McLoughlin, E; Cafolla, A; Hughes, G. Physical Review B – Condensed Matter and Materials Physics 1997

The photoluminescence of Pt-implanted silicon. Alves, E; Bollmann, J; Deicher, M; Carmo, M.C; Henry, M.O; Knopf, M.H.A; Leitão, J.P; Magerle, R; McDonagh, C.J. Materials Science Forum 1997

Measurements of extreme UV yields from Nd-YAG plasmas using a multilayer monochromator. Mosnier, J.P; Bac, S; Barchewitz, R; Kennedy, E.T; Collins, M; Costelloa, J.T. Journal of Electron Spectroscopy and Related Phenomena 1996

First photoexcitation measurements and r-matrix calculations of even-parity hollow states in laser-excited lithium atoms. Cubaynes, D; Diehl, S; Journel, L; Rouvellou, B; Bizau, J.-M; Wuilleumier, F.J; Berrah, N; Voky, L; Faucher, P; Hibbert, A; Blancard, C; Kennedy, E; Morgan, T.J; Bozek, J; Schlachter, A.S. Physical Review Letters 1996

Trends in 4d-subshell photoabsorption along the iodine isonuclear sequence: I, [Formula Presented], and [Formula Presented]. O’Sullivan, G; McGuinness, C; Costello, J.T; Kennedy, E.T; Weinmann, B. Physical Review A – Atomic, Molecular, and Optical Physics 1996

Resonant photoionization of atomic lithium in the region of the first and second inner-shell thresholds. Kiernan, L.M; Lee, M.-K; Sonntag, B.F; Zimmermann, P; Costello, J.T; Kennedy, E.T; Gray, A; Vo Ky, L. Journal of Physics B: Atomic, Molecular and Optical Physics 1996

New experiments in photoabsorption studies of singly and multiply charged ions. Kennedy, E.T; Costello, J.T; Mosnier, J.P. Journal of Electron Spectroscopy and Related Phenomena 1996

3s23p34S → 3s3p3(5S)np 4P transitions in atomic phosphorus. Mitchell, P.I; Carroll, P.K; van Kampen, P. Journal of Physics B: Atomic, Molecular and Optical Physics 1996

Magnetron sputtering of TiN protective coatings for medical applications. Kola, P.V; Daniels, S; Cameron, D.C; Hashmi, M.S.J. Journal of Materials Processing Technology 1996

Plasma production from helicon waves. Degeling, A.W; Jung, C.O; Boswell, R.W; Ellingboe, A.R. Physics of Plasmas 1996

Capacitive, inductive and helicon-wave modes of operation of a helicon plasma source. Ellingboe, A.R; Boswell, R.W. Physics of Plasmas 1996

Experiments and modeling of a helicon source. Molvik, A.W; Rognlien, T.D; Byers, J.A; Cohen, R.H; Ellingboe, A.R; Hooper, E.B; McLean, H.S; Stallard, B.W; Vitello, P.A. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 1996

Hard X-ray monitoring of Centaurus A by SIGMA during 1990-94: Definition of a low luminosity state. Bond, I.A; Ballet, J; Denis, M; Vargas, M; Jourdain, E; Roques, J.P; Bouchet, L; Niel, M; Chernyakova, M; Churazov, E; Gilfanov, M; Sunyaev, R; Finoguenov, A; Dyachkov, A; Khavenson, N; Novikov, B. Astronomy and Astrophysics 1996

Numerical simulations of H2 emission in jets from young stellar objects. Downes, T.P. Astrophysical Letters and Communications 1996

Analysis of the impact of dislocation distribution on the breakdown voltage of GaAs-based power varactor diodes. McNally, P.J; Herbert, P.A.F; Tuomi, T; Karilahti, M; Higgins, J.A. Journal of Applied Physics 1996

Effects of Au overlayers on the el-ectrical and morphological characteristics of Pd/Sn ohmic contacts to n-GaAs. Islam, M.S; McNally, P.J; Cameron, D.C; Herbert, P.A.F. Thin Solid Films 1996

Comparison of Pd/Sn and Pd/Sn/Au thin-film systems for device metallization. Islam, M.S; McNally, Patrick J; Cameron, D.C; Herbert, P.A.F. Materials Research Society Symposium – Proceedings 1996