NCPST Facilities

Experimental

DCU Nano Research Facility

NCPST collaborates with DCU’s Nano Research Facility (NRF). The NRF provides open access high end state of the art scientific equipment for research in academia and industry.

NRF

Atomic Layer Deposition

Offerings

Rapid sample transfer time between Atomic Layer Deposition (ALD) processing module and the X-Ray Photoelectron Spectroscopy (XPS) system. This all occurs under ultra-low vacuum which eliminates atmospheric effects such as oxidation.
In-situ surface plasma treatments of surfaces
Optimization of Atomic Layer Deposition (ALD) processes including investigations of infiltration of ALD precursors into polymer materials
Plasma assisted oxidation/reduction studies of infiltrated polymer materials
Monochromated XPS based chemical characterisation of individual processing steps.
XPS 2-D mapping of surface chemical composition at a spatial resolution of 10µm

View Facility

Ultrafast Spectroscopy

Offerings

A spectral range of 320-900 nm, which can be extended into the near-IR up to 1600 nm.
A time delay range of 0-8 ns, with a time resolution of better than 50 fs.
A delay step size of 2 fs and bi-directional repeatability of 8 fs.
Sample sizes of up to 200 mm x 250 mm

Offerings

Modes include Mid-IR Pump with Mid-IR Probe, 2D Mid-IR, UV/Visible Pump with Mid-IR Probe and Transient 2D-IR (UV/Visible Pump with 2D-IR).
Spectral range of 3-12 µm or 830-3300 cm-1, with a spectral window of 1.5 µm at a centre wavelength of 5 µm.
In transient mode, the system has a maximum (double pass) delay of 4 ns with a corresponding step size of 16.7 fs.

View Facility

Hitachi M308 ECR Industrial Etcher

Coming soon

The Hitachi M308 ECR is an industrial etcher, it produces high energetic electrons in the resonance zone which create very dense plasmas at very low pressure. The addition of a low frequency bias source on the wafer results in independent control of plasma density and ion flux. The low pressure operation gives improved directionality of fluxes arriving at the wafer surface. These characteristics significantly influence etching uniformity and speed. Moreover, ECR plasma sources have two frequencies and, in contrast to single frequency plasma sources, are designed for the “independent” control of an ion flux and an ion energy.

Oxford Instrument RIE and CVD 100

Coming Soon

The PlasmaPro 100 RIE modules deliver isotropic and anisotropic dry etching for an extensive range of processes. It is suitable for research and production customers, providing a controlled environment that improves process repeatability with load-lock and cassette-to-cassette options.

Compatible with all wafer sizes up to 200mm
Single-wafer or batch processing with excellent process control
High control of the gases and plasma power
Rapid change between wafer sizes
Low cost of ownership and ease of serviceability
Excellent uniformity, high throughput and high precision processes
In-situ chamber cleaning and end-pointing
Wide temperature range electrode, -150°C to 400°

Chemical Vapour Deposition (CVD) & PECVD tools for growth of 1D/2D nanomaterials and heterostructures. PlasmaPro 100 Nano (formerly Nanofab) delivers high-performance growth of nanomaterials with in-situ catalyst activation and rigorous process control, with flexible temperatures up to 1,200°C.

Excellent uniformity with flexible temperatures up to 1200°C
Options of a 700°C, 800°C or 1200°C table
Sample sizes up to 200mm
Vacuum load lock – Quick sample exchange
Cold wall design with showerhead based uniform precursor delivery
Optional liquid/solid source delivery system for growth of
MoS2,MoSe2 and other TMDCs

Oxford Instrument RIE 80

The PlasmaPro 80 reactive ion etch (RIE) is a compact, small footprint system offering versatile etch and deposition solutions with convenient open loading. It is easy to site and easy to use, with no compromise on process quality. The open load design allows fast wafer loading and unloading, ideal for research, prototyping and low-volume production. It enables high performance processes using optimised electrode cooling and excellent substrate temperature control.

Open load design allows fast wafer loading and unloading
Excellent etch control and rate determination
Excellent wafer temperature uniformity
Up to 200mm wafers
Low cost of ownership
Built to Semi S2/S8 standards

Other Facilities

Details coming soon

NCPST Facilities

Experimental

DCU Nano Research Facility

Atomic Layer Deposition

Ultrafast Spectroscopy

Hitachi M308 ECR Industrial Etcher

Oxford Instrument RIE and CVD 100

Oxford Instrument RIE 80

Other Facilities

Computational