Determination of SF6 reactive ion etching end point of the SiO2/Si system by plasma impedance monitoring
Study of photoluminescence at 3.310 and 3.368 eV in GaN/sapphire(0001) and GaN/GaAs(001) grown by liquid-target pulsed-laser deposition
Study of expansion of laser ablation plumes of Ga and GaN in various N 2 atmospheres using stigmatic emission spectroscopy
White beam synchrotron X-ray topography and X-ray diffraction measurements of epitaxial lateral overgrowth of GaN