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White beam topography of 300 mm Si wafers

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Abstract

Synchrotron X-ray topography is well suited for a detailed characterisation of the real structure of single crystals and devices based on single crystalline materials. The nature and distribution of dislocations, stacking faults, inclusions etc. as well as long range strain from processing are of high interest especially in semiconductor wafers and electronic devices. To overcome the limitations of the classical photographic film method, we use a high resolution digital imaging detector. The digital scan of selected reflections allows the fast mapping of large sample areas with high resolution in combination with the high dynamic range of the CCD-camera. We report our first applications to the metrology of 300 mm Si wafers.

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Acknowledgements

This work was supported by the European Community—Research Infrastructure Action under the FP6 ‘‘Structuring the European Research Area’’ Programme (through the Integrated Infrastructure Initiative ‘‘Integrating Activity on Synchrotron and Free Electron Laser Science’’. PMN gratefully acknowledges Science Foundation Ireland for funding this project under the Investigator Programme Grant scheme.

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Authors and Affiliations

  1. Kristallographisches Institut, University Freiburg, Hermann-Herder-Str. 5, D-79104, Freiburg i. Br, Germany

    A. N. Danilewsky & J. Wittge

  2. Institut für Synchrotronstrahlung, Research Centre Karlsruhe, Karlsruhe, Germany

    A. Rack, T. Weitkamp, R. Simon & T. Baumbach

  3. Research Institute for Networks and Communications Engineering, Dublin City University, Dublin, Ireland

    P. McNally

Authors
  1. A. N. Danilewsky
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  2. J. Wittge
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  3. A. Rack
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  4. T. Weitkamp
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  5. R. Simon
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  6. T. Baumbach
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  7. P. McNally
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Correspondence to A. N. Danilewsky.

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Danilewsky, A.N., Wittge, J., Rack, A. et al. White beam topography of 300 mm Si wafers. J Mater Sci: Mater Electron 19 (Suppl 1), 269–272 (2008). https://doi.org/10.1007/s10854-007-9480-5

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  • DOI: https://doi.org/10.1007/s10854-007-9480-5

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