Abstract
Synchrotron X-Ray Topography (SXRT) has been performed on a germanium-silicon substrate fabricated by direct wafer bonding. SXRT allows for quantification of the stress at the bonded interface. This non-invasive techniques help assess the likelihood of defect nucleation induced by the bonding process. This study shows that the stress at the bonded interface is an order of magnitude lower than the level required to cause spontaneous nucleation of threading dislocations.