In Situ Synchrotron X-Ray Topography Observation of Double-Ended Frank-Read Sources in PVT-Grown 4H-SiC Wafers

Yu Yang; Jian Qiu Guo; Balaji Raghothamachar; Michael Dudley; Swetlana Weit; Andreas N. Danilewsky; Patrick J. McNally; Brian R. Tanner

doi:10.4028/www.scientific.net/MSF.924.172

Paper Titles

Extension, Closure and Conversion of In-Grown Stacking Faults in 4H-SiC Epilayers
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Immobilization Phenomenon of Partials Surrounding Double Shockley Stacking Faults in Heavily Nitrogen Doped 4H-SiC Crystal with Thermal Anneal
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Influence of Triangular Defects on the Electrical Characteristics of 4H-SiC Devices
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Origin Analysis and Elimination of Obtuse Triangular Defects in 4° Off 4H-SiC Epitaxy
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In Situ Synchrotron X-Ray Topography Observation of Double-Ended Frank-Read Sources in PVT-Grown 4H-SiC Wafers
p.172

Direct Observation of Stress Relaxation Process in 4H-SiC Homoepitaxial Layers via In Situ Synchrotron X-Ray Topography
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X-Ray Topography Analysis of 4H-SiC Crystals Grown by the High-Temperature Gas Source Method
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Analysis of Compensation Effects in Aluminum-Implanted 4H-SiC Devices
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Comparison of Conduction Mechanisms in Heavily Al-Doped 4H-SiC and Heavily Al- and N-Codoped 4H-SiC
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HomeMaterials Science ForumMaterials Science Forum Vol. 924In Situ Synchrotron X-Ray Topography Observation...

In Situ Synchrotron X-Ray Topography Observation of Double-Ended Frank-Read Sources in PVT-Grown 4H-SiC Wafers

Abstract:

We present in-situ observations of the dynamical operation of multiple double-ended Frank-Read dislocation sources in a PVT-grown 4H-SiC wafer under thermal gradient stresses. The nucleation of these sources is facilitated by a specific configuration consisting of one basal plane dislocation (BPD) segment pinned by two threading edge dislocations (TEDs). This configuration is formed during PVT crystal growth by deflection of TEDs on to the basal planes by macrosteps and re-deflection of resulting BPDs back into TEDs. Under the influence of thermal gradient stresses induced by heating inside a double ellipsoidal mirror furnace, the pinned BPD segment glides and activates dislocation multiplication by the double Frank-Read source mechanism. A more intricate mechanism of swapping of TED pinning points between Frank-Read sources lying on same basal plane is identified, enabling one dislocation loop to effectively “pass through” the other dislocations on same basal plane.

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Periodical:

Materials Science Forum (Volume 924)

Pages:

172-175

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.924.172

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Online since:

June 2018

Authors:

Yu Yang*, Jian Qiu Guo, Balaji Raghothamachar, Michael Dudley, Swetlana Weit, Andreas N. Danilewsky, Patrick J. McNally, Brian R. Tanner

Keywords:

4H-SiC, Frank-Read Source, Heat Treatment, In Situ Studies, X-Ray Topography

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* - Corresponding Author

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