Growth and Properties of SiC On-Axis Homoepitaxial Layers

Jawad ul Hassan; Peder Bergman; Justinas Palisaitis; Anne Henry; Patrick J. McNally; S. Anderson; Erik Janzén

doi:10.4028/www.scientific.net/MSF.645-648.83

Paper Titles

Improvements of the Continuous Feed-Physical Vapor Transport Technique (CF-PVT) for the Seeded Growth of 3C-SiC Crystals
p.63

Is the Liquid Phase a Viable Approach for Bulk Growth of 3C-SiC?
p.67

The Effect of Phenol Resin Types and Mixing Ratios on the Synthesis of High-Purity β-SiC Powder by the Sol-Gel Method
p.71

Low-Pressure Fast Growth and Characterization of 4H-SiC Epilayers
p.77

Growth and Properties of SiC On-Axis Homoepitaxial Layers
p.83

High-Performance Multi-Wafer SiC Epitaxy – First Results of Using a 10x100mm Reactor
p.89

Concentrated Chloride-Based Epitaxial Growth of 4H-SiC
p.95

4H-SiC Homoepitaxial Growth on Vicinal-Off Angled Si-Face Substrate
p.99

Epitaxial Growth of 4H-SiC with High Growth Rate Using CH₃Cl and SiCl₄ Chlorinated Growth Precursors
p.103

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Growth and Properties of SiC On-Axis Homoepitaxial...

Growth and Properties of SiC On-Axis Homoepitaxial Layers

Abstract:

Homoepitaxial growth has been performed on 3” Si-face on-axis 4H–SiC substrates using standard gas system in a horizontal Hot-wall chemical vapor deposition system. Substrate surface damages are found to act as preferential nucleation sites for 3C inclusions also, the surface morphology after in-situ etching is found to largely influence the polytype stability in the epilayer. Different in-situ etching conditions were studied where Si-rich conditions are found to be better. Growth parameters and starting growth conditions are refined to obtain stable polytype in the epilayer. High quality homoepitaxial layers with 100% 4H–SiC are obtained on 3” substrates. Different optical and structural techniques are used to characterize the layers and to understand the growth mechanisms. The layers are found to be of high quality and no epitaxial defects typically found on off-axis epitaxial layers are observed. A high surface roughness is observed in these layers, however higher growth rate significantly lowers the surface roughness without affecting the polytype stability in the epilayer.