Anomalous Behavior of the Near-Threshold Photoionization Cross Section of the Neon Isoelectronic Sequence: A Combined Experimental and Theoretical Study

H. S. Chakraborty; A. Gray; J. T. Costello; P. C. Deshmukh; G. N. Haque; E. T. Kennedy; S. T. Manson; J-P. Mosnier

doi:10.1103/PhysRevLett.83.2151

Anomalous Behavior of the Near-Threshold Photoionization Cross Section of the Neon Isoelectronic Sequence: A Combined Experimental and Theoretical Study

H. S. Chakraborty, A. Gray, J. T. Costello, P. C. Deshmukh, G. N. Haque, E. T. Kennedy, S. T. Manson, and J-P. Mosnier

Phys. Rev. Lett. 83, 2151 – Published 13 September 1999

Abstract

We present a combined theoretical and experimental investigation of photoionization along the Ne isoelectronic sequence and show that the near-threshold behavior of the cross section for $Si^{4 +}$ differs radically from the nearby ions in the sequence. We demonstrate that the general nature of the underlying physics implies that dramatic changes in near-threshold behavior may be expected for many other ions.

Received 24 May 1999

DOI:https://doi.org/10.1103/PhysRevLett.83.2151

Authors & Affiliations

H. S. Chakraborty¹, A. Gray², J. T. Costello², P. C. Deshmukh¹, G. N. Haque³, E. T. Kennedy^2,*, S. T. Manson⁴, and J-P. Mosnier²

¹Department of Physics, Indian Institute of Technology, Madras 600036, India
²Centre for Laser Plasma Research, School of Physical Sciences, Dublin City University, Dublin 9, Ireland
³Department of Physics, Morehouse College, Atlanta, Georgia 30314
⁴Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303