Skip to main content
SpringerLink
Log in

Misfit dislocations in GaAsN/GaAs interface

  • Published:
Journal of Materials Science: Materials in Electronics Aims and scope Submit manuscript

Abstract

Highly strained GaAsN layers were grown on GaAs by metal-organic vapor phase epitaxy and studied by synchrotron X-ray topography and X-ray diffraction. The critical thickness for misfit dislocation formation of the GaAs0.965N0.035 epitaxial layer on GaAs was found to be between 50 and 80 nm. In layers thicker than the critical thickness a misfit dislocation network was observed. The network was found to be isotropic and uniform. The relaxation of the strained epilayer begins through the misfit-dislocation generation and continues via formation of cracks. The cracks are not distributed as uniformly as misfit dislocations.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. M. Weyers, M. Sato and H. Ando, Jpn. J. Appl. Phys. 31 (1992) L853.

    Google Scholar 

  2. M. Kondow, K. Uomi, K. Hosomi and T. Mozume, ibid. 33 (1994) L1056.

    Google Scholar 

  3. M. Kondow, S. Nakatsuka, T. Kitatani, Y. Yazawa and M. Okai, ibid. 35 (1996) 5711.

    Google Scholar 

  4. D. J. Friedman, J. F. Geisz, S. R. Kurtz and J. M. Olson, J. Cryst. Growth 195 (1998) 409.

    Google Scholar 

  5. P. C. Chang, A. G. Baca, N. Y. Li, P. R. Sharps, H. Q. Hou, J. R. Laroche and F. Ren, Appl. Phys. Lett. 76 (2000) 2788.

    Google Scholar 

  6. W. Shan, W. Walukiewicz, J. W. Ager III, E. E. Haller, J. F. Geisz, D. J. Friedman, J. M. Olson and S. R. Kurtz, J. Appl. Phys. 86 (1999) 2349.

    Google Scholar 

  7. I. A. Buyanova, G. Pozina, P. N. Hai, W. M. Chen, H. P. Xin and C. W. Tu, Phys. Rev. B 63 (2000) 033303.

    Google Scholar 

  8. D. Kwon, R. J. Kaplar, S. A. Ringel, A. A. Allerman, S. R. Kurtz and E. D. Jones, Appl. Phys. Lett. 74 (1999) 2830.

    Google Scholar 

  9. K. Uesugi, N. Morooka and I. Suemune, ibid. 74 (1999) 1254.

    Google Scholar 

  10. J. Toivonen, T. Hakkarainen, M. Sopanen and H. Lipsanen, J. Cryst. Growth 221 (2000) 456.

    Google Scholar 

  11. R. RantamÄki, T. Tuomi, Z. R. Zytkiewicz, P. J. Mcnally and A. N. Danilewsky, J. X-Ray Sci. Technol. 8 (2000) 277.

    Google Scholar 

  12. S. HasenÖhrl, R. KÚdela, J. NovÁk, T. O. Tuomi and L. Knuuttila, Mater. Sci. Eng. B 88 (2000) 134.

    Google Scholar 

  13. A. Hoffmann, R. Heitz, A. Kaschner, T. LÜttgert, H. Born, A. Y. Egorov and H. Riechert, Mater. Sci. Eng. B 93 (2002) 55.

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Laboratory of Biophysics, University of Turku, P.O. Box 123, FIN-, 20521, Turku, Finland e

    J. Toivonen

  2. Optoelectronics Laboratory, Helsinki University of Technology, P.O. Box 3500, FIN-, 02015, HUT, Finland

    T. Tuomi, J. Riikonen, L. Knuuttila, T. Hakkarainen, M. Sopanen, H. Lipsanen, W. Chen & D. Lowney

Authors
  1. J. Toivonen
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. T. Tuomi
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. J. Riikonen
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. L. Knuuttila
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. T. Hakkarainen
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. M. Sopanen
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. H. Lipsanen
    View author publications

    You can also search for this author in PubMed Google Scholar

  8. P. J. McNally
    View author publications

    You can also search for this author in PubMed Google Scholar

  9. W. Chen
    View author publications

    You can also search for this author in PubMed Google Scholar

  10. D. Lowney
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Toivonen, J., Tuomi, T., Riikonen, J. et al. Misfit dislocations in GaAsN/GaAs interface. Journal of Materials Science: Materials in Electronics 14, 267–270 (2003). https://doi.org/10.1023/A:1023999106469

Download citation

  • Issue Date:

  • DOI: https://doi.org/10.1023/A:1023999106469

Keywords

Search

Navigation